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HYG037N04LR1D

Public Made by Adom

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HUAYI MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HYG037N04LR1D

HUAYI · MOSFETs · TO-252-2L

HYG037N04LR1D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the datasheet gives gate-source voltage of ±20 V max, gate threshold of 1 V min to 3 V max at 250 µA, and gate-source leakage of ±100 nA max.
2 D passive Drain, the center position, which is shown as a trimmed stub and is connected to the exposed tab; the datasheet rates it 40 V drain-source and 80 A continuous at Tc=25℃.
3 S passive Source; the datasheet gives body-diode continuous source current as 80 A at Tc=25℃.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 40 V 2
Gate-Source Voltage VGSS -20 20 V 2
Junction Temperature Range TJ -55 175 ℃ 2
Storage Temperature Range TSTG -55 175 ℃ 2
Source Current-Continuous (Body Diode) IS 80 A Tc=25℃ 2
Pulsed Drain Current IDM 320 A Tc=25℃ 2
Continuous Drain Current ID 80 A Tc=25℃ 2
Continuous Drain Current ID 56 A Tc=100℃ 2
Maximum Power Dissipation PD 62.5 W Tc=25℃ 2
Maximum Power Dissipation PD 31.3 W Tc=100℃ 2
Thermal Resistance, Junction-to-Case RθJC 2.4 ℃/W 2
Thermal Resistance, Junction-to-Ambient RθJA 110 ℃/W Surface mounted on FR-4 board 2
Single Pulsed-Avalanche Energy EAS 170 mJ L=0.3mH; starting TJ=25℃, RG=25Ω, VGS=10V 2
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V,IDS=250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS=40V,VGS=0V 2
Drain-to-Source Leakage Current IDSS 50 μA TJ=125℃ 2
Gate Threshold Voltage VGS(th) 1 1.9 3 V VDS=VGS, IDS=250μA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 3.8 4.6 mΩ VGS=10V,IDS=20A 2
Drain-Source On-State Resistance RDS(ON) 6 7.5 mΩ VGS=4.5V,IDS=20A 2
Diode Forward Voltage VSD 0.8 1.2 V ISD=20A,VGS=0V 2

CAD (KiCad official)

  • Symbol: HYG037N04LR1D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hyg037n04lr1d-etched.step / hyg037n04lr1d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg037n04lr1d.step / hyg037n04lr1d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (9 pp, sha256 04b75bec9ebfd2c4, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF