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HYG035N08NS2C2

Public Made by Adom

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HUAYI MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorhyg035n08ns2c2factory-2.0.0extractor-text

Verified HYG035N08NS2C2

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 9 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HYG035N08NS2C2 · DFN5x6-8 · 9 pins
  • ✓copper: 16 copper pads, none touching another net
  • ✓datasheet: all 9 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: DFN-S-8-1EP_6x5mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-yw0dqykh/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 9 pins = 9 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 9 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ hyg035n08ns2c2.kicad_sym✓ hyg035n08ns2c2.kicad_mod✓ hyg035n08ns2c2.step
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Ray Publish 0.1.0 694d63b 7d ago

HYG035N08NS2C2

HUAYI · MOSFETs · DFN5x6-8

HYG035N08NS2C2 from HUAYI, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, pin 1 as marked on the package drawing; continuous drain current rating is 105A at Tc=25°C.
2 S passive Source terminal of the N-channel MOSFET, tied in parallel with the other source pins; body-diode source current is 105A continuous.
3 S passive Source terminal of the N-channel MOSFET, tied in parallel with the other source pins; drain-source voltage rating is 80V.
4 G input Gate terminal with a ±20V maximum gate-source voltage and a 2V to 4V threshold at 250μA.
5 D passive Drain terminal, 80V maximum drain-source voltage and 105A continuous current at Tc=25°C.
6 D passive Drain terminal, tied in parallel with the other drain pins; pulsed drain current is 420A at Tc=25°C.
7 D passive Drain terminal, tied in parallel with the other drain pins; RDS(ON) is 2.8mΩ typ. (3.5mΩ max) at VGS=10V, IDS=20A.
8 D passive Drain terminal, tied in parallel with the other drain pins; 80V drain-source breakdown voltage minimum at 250μA.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HUAYI
Package DFN5x6-8
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 80 V VGS=0V,IDS= 250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS= 80V,VGS=0V 2
Drain-to-Source Leakage Current IDSS 50 μA TJ=125°C 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, IDS= 250μA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 2.8 3.5 mΩ VGS= 10V,IDS=20A 2
Diode Forward Voltage VSD 0.81 1.2 V ISD=20A,VGS=0V 2
Drain-Source Voltage VDSS 80 V 2
Gate-Source Voltage VGSS -20 20 V 2
Junction Temperature Range TJ -55 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Source Current-Continuous (Body Diode) IS 105 A Tc=25°C, mounted on large heat sink 2
Pulsed Drain Current IDM 420 A Tc=25°C 2
Continuous Drain Current ID 105 A Tc=25°C 2
Continuous Drain Current ID 74.2 A Tc=100°C 2
Maximum Power Dissipation PD 83.3 W Tc=25°C 2
Maximum Power Dissipation PD 41.7 W Tc=100°C 2
Single Pulsed-Avalanche Energy EAS 330 mJ L=0.3mH 2
Thermal Resistance, Junction-to-Case RθJC 1.8 °C/W 2
Thermal Resistance, Junction-to-Ambient RθJA 45 °C/W Surface mounted on 1in2 FR-4 board 2

CAD (KiCad official)

  • Symbol: HYG035N08NS2C2
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: hyg035n08ns2c2-etched.step / hyg035n08ns2c2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg035n08ns2c2.step / hyg035n08ns2c2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (9 pp, sha256 b0298cf6f43f7088, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF