component

HYG028N10NS1B6

Public Made by Adom

by adom

HUAYI MOSFETs, TO-263-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorshyg028n10ns1b6factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
hyg028n10ns1b6 / README.md
History Download
Ray Publish 0.1.0 85deda1 17d ago

HYG028N10NS1B6

HUAYI · MOSFETs · TO-263-6

HYG028N10NS1B6 from HUAYI, in a TO-263-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±20 V and a threshold of 2 V min to 4 V max at 250 µA.
2 S passive Source terminal, one of the pins 2, 3, 5, 6 and 7 tied together as source, with continuous drain current of 230 A at Tc=25°C.
3 S passive Source terminal, one of the pins 2, 3, 5, 6 and 7 tied together as source, with continuous drain current of 230 A at Tc=25°C.
4 D passive Drain terminal (the short center lead, which the datasheet's symbol shows as pin 4), rated for 100 V drain-source voltage and 230 A continuous at Tc=25°C.
5 S passive Source terminal, one of the pins 2, 3, 5, 6 and 7 tied together as source, with continuous drain current of 230 A at Tc=25°C.
6 S passive Source terminal, one of the pins 2, 3, 5, 6 and 7 tied together as source, with continuous drain current of 230 A at Tc=25°C.
7 S passive Source terminal, one of the pins 2, 3, 5, 6 and 7 tied together as source, with continuous drain current of 230 A at Tc=25°C.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-263-6
Category Transistors/Thyristors
Pins 7

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V,IDS=250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS=100V,VGS=0V 2
Drain-to-Source Leakage Current (TJ=125°C) IDSS 50 μA VDS=100V,VGS=0V, TJ=125°C 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, IDS=250μA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 2.4 3.1 mΩ VGS=10V,IDS=50A 2
Diode Forward Voltage VSD 0.84 1.3 V ISD=50A,VGS=0V 2
Drain-Source Voltage VDSS 100 V 2
Gate-Source Voltage VGSS -20 20 V 2
Maximum Junction Temperature TJ -55 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Source Current-Continuous (Body Diode) IS 230 A Tc=25°C, mounted on large heat sink 2
Pulsed Drain Current IDM 750 A Tc=25°C 2
Continuous Drain Current ID 230 A Tc=25°C 2
Continuous Drain Current ID 162 A Tc=100°C 2
Maximum Power Dissipation PD 300 W Tc=25°C 2
Maximum Power Dissipation PD 150 W Tc=100°C 2
Thermal Resistance, Junction-to-Case RJC 0.5 °C/W 2
Thermal Resistance, Junction-to-Ambient RJA 60 °C/W Surface mounted on FR-4 board 2
Single Pulsed-Avalanche Energy EAS 1324.3 mJ L=0.3mH 2

CAD (KiCad official)

  • Symbol: HYG028N10NS1B6
  • Footprint: Package_TO_SOT_SMD:TO-263-6
  • 3D model: TO-263-6 (KiCad packages3D, STEP)
  • 3D model files: hyg028n10ns1b6-etched.step / hyg028n10ns1b6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg028n10ns1b6.step / hyg028n10ns1b6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (9 pp, sha256 77c3b6098f30442c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF