component

HYG028N10NS1B

Public Made by Adom

by adom

HUAYI MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HYG028N10NS1B

HUAYI · MOSFETs · TO-263-2L

HYG028N10NS1B from HUAYI, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V and a threshold of 2 to 4 V at IDS=250μA.
2 D passive Drain; rated for VDSS 100 V and 230 A continuous at Tc=25°C, and also connected to the tab.
3 S passive Source; carries up to 230 A continuous (body diode IS 230 A at Tc=25°C).

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-263-2L
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V Tc=25°C 2
Gate-Source Voltage VGSS -20 20 V Tc=25°C 2
Maximum Junction Temperature TJ -55 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Source Current-Continuous (Body Diode) IS 230 A Tc=25°C, mounted on large heat sink 2
Pulsed Drain Current IDM 610 A Tc=25°C 2
Continuous Drain Current ID 230 A Tc=25°C 2
Continuous Drain Current ID 162 A Tc=100°C 2
Maximum Power Dissipation PD 300 W Tc=25°C 2
Maximum Power Dissipation PD 150 W Tc=100°C 2
Thermal Resistance, Junction-to-Case RJC 0.5 °C/W 2
Thermal Resistance, Junction-to-Ambient RJA 62 °C/W Surface mounted on FR-4 board 2
Single Pulsed-Avalanche Energy EAS 980.7 mJ L=0.3mH 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V,IDS=250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS=100V,VGS=0V 2
Drain-to-Source Leakage Current IDSS 50 μA VDS=100V,VGS=0V, TJ=125°C 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, IDS=250μA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 2.6 3.3 mΩ VGS=10V,IDS=50A 2
Diode Forward Voltage VSD 0.86 1.3 V ISD=50A,VGS=0V 2
Reverse Recovery Time trr 86.5 ns ISD=50A,dISD/dt=100A/μs 2
Reverse Recovery Charge Qrr 208.8 nC ISD=50A,dISD/dt=100A/μs 2
Gate Resistance RG 2.8 Ω VGS=0V,VDS=0V,F=1MHz 3
Input Capacitance Ciss 10320 pF VGS=0V, VDS=25V, Frequency=1.0MHz 3
Output Capacitance Coss 3454 pF VGS=0V, VDS=25V, Frequency=1.0MHz 3
Reverse Transfer Capacitance Crss 242 pF VGS=0V, VDS=25V, Frequency=1.0MHz 3
Turn-on Delay Time td(ON) 27.3 ns VDD=50V,RG=2.5Ω,IDS=50A,VGS=10V 3
Turn-on Rise Time Tr 103.7 ns VDD=50V,RG=2.5Ω,IDS=50A,VGS=10V 3
Turn-off Delay Time td(OFF) 92.8 ns VDD=50V,RG=2.5Ω,IDS=50A,VGS=10V 3
Turn-off Fall Time Tf 100.8 ns VDD=50V,RG=2.5Ω,IDS=50A,VGS=10V 3
Total Gate Charge Qg 176 nC VDS=80V, VGS=10V, ID=50A 3
Gate-Source Charge Qgs 56 nC VDS=80V, VGS=10V, ID=50A 3
Gate-Drain Charge Qgd 48 nC VDS=80V, VGS=10V, ID=50A 3

CAD (KiCad official)

  • Symbol: HYG028N10NS1B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2L (KiCad packages3D, STEP)
  • 3D model files: hyg028n10ns1b-etched.step / hyg028n10ns1b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg028n10ns1b.step / hyg028n10ns1b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (10 pp, sha256 aaff48720357c888, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF