component

HYG024N03LR1D

Public Made by Adom

by adom

HUAYI MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorshyg024n03lr1dfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

HYG024N03LR1D

HUAYI · MOSFETs · TO-252-2L

HYG024N03LR1D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V and threshold VGS(th) of 1 V min to 3 V max at IDS=250μA.
2 D passive Drain, the center position (short stub in the drawing) and the exposed tab; VDSS 30 V and continuous ID 100 A at Tc=25℃.
3 S passive Source; body-diode continuous source current IS is 100 A at Tc=25℃.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V,IDS=250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS=30V,VGS=0V 2
Drain-to-Source Leakage Current IDSS 50 μA TJ=125℃ 2
Gate Threshold Voltage VGS(th) 1 1.4 3 V VDS=VGS, IDS=250μA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=+20V/-20V,VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 2.3 2.8 mΩ VGS=10V,IDS=20A 2
Drain-Source On-State Resistance RDS(ON) 3 3.6 mΩ VGS=4.5V,IDS=20A 2
Diode Forward Voltage VSD 0.77 1.2 V ISD=20A,VGS=0V 2
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS -20 20 V 2
Junction Temperature Range TJ -55 175 ℃ 2
Storage Temperature Range TSTG -55 175 ℃ 2
Source Current-Continuous (Body Diode) IS 100 A Tc=25℃, mounted on large heat sink 2
Pulsed Drain Current IDM 378 A Tc=25℃ 2
Continuous Drain Current ID 100 A Tc=25℃ 2
Continuous Drain Current ID 70 A Tc=100℃ 2
Maximum Power Dissipation PD 57 W Tc=25℃ 2
Maximum Power Dissipation PD 28 W Tc=100℃ 2
Thermal Resistance, Junction-to-Case RθJC 2.6 ℃/W 2
Thermal Resistance, Junction-to-Ambient RθJA 110 ℃/W Surface mounted on FR-4 board 2
Single Pulsed-Avalanche Energy EAS 338.8 mJ L=0.3mH 2

CAD (KiCad official)

  • Symbol: HYG024N03LR1D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hyg024n03lr1d-etched.step / hyg024n03lr1d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg024n03lr1d.step / hyg024n03lr1d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (9 pp, sha256 a08d7d068db7e2f2, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF