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Contents

README

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HYG023N04NR1D

HUAYI · MOSFETs · TO-252-2L

HYG023N04NR1D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS(th) of 2 V min to 4 V max at IDS=250μA and an absolute maximum VGSS of ±25 V.
2 D passive Drain; the center lead position (trimmed stub) and the exposed tab, rated VDSS 45 V and 140 A continuous at Tc=25℃.
3 S passive Source; the current return terminal, with continuous body-diode current IS of 140 A at Tc=25℃.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 45 V VGS=0V,IDS=250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS=45V,VGS=0V 2
Drain-to-Source Leakage Current IDSS 50 μA VDS=45V,VGS=0V, TJ=125℃ 2
Gate Threshold Voltage VGS(th) 2 2.8 4 V VDS=VGS, IDS=250μA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±25V,VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 2.3 2.9 mΩ VGS=10V,IDS=40A 2
Diode Forward Voltage VSD 0.8 1 V ISD=40A,VGS=0V 2
Reverse Recovery Time trr 22 ns ISD=20A,dISD/dt=100A/μs 2
Reverse Recovery Charge Qrr 16 nC ISD=20A,dISD/dt=100A/μs 2
Gate Resistance RG 0.6 Ω VGS=0V,VDS=0V,F=1MHz 3
Input Capacitance Ciss 3412 pF VGS=0V, VDS=25V, Frequency=1MHz 3
Output Capacitance Coss 615 pF VGS=0V, VDS=25V, Frequency=1MHz 3
Reverse Transfer Capacitance Crss 485 pF VGS=0V, VDS=25V, Frequency=1MHz 3
Turn-on Delay Time td(ON) 16 ns VDD=20V,RG=4Ω,IDS=20A,VGS=10V 3
Turn-on Rise Time Tr 59 ns VDD=20V,RG=4Ω,IDS=20A,VGS=10V 3
Turn-off Delay Time td(OFF) 40 ns VDD=20V,RG=4Ω,IDS=20A,VGS=10V 3
Turn-off Fall Time Tf 62 ns VDD=20V,RG=4Ω,IDS=20A,VGS=10V 3
Total Gate Charge Qg 82 nC VDS=32V, VGS=10V, ID=20A 3
Gate-Source Charge Qgs 16 nC VDS=32V, VGS=10V, ID=20A 3
Gate-Drain Charge Qgd 31 nC VDS=32V, VGS=10V, ID=20A 3
Drain-Source Voltage VDSS 45 V Tc=25℃ 2
Gate-Source Voltage VGSS -25 25 V Tc=25℃ 2
Junction Temperature Range TJ -55 175 ℃ 2
Storage Temperature Range TSTG -55 175 ℃ 2
Source Current-Continuous (Body Diode) IS 140 A Tc=25℃, Mounted on Large Heat Sink 2
Pulsed Drain Current IDM 560 A Tc=25℃ 2
Continuous Drain Current ID 140 A Tc=25℃ 2
Continuous Drain Current ID 99 A Tc=100℃ 2
Maximum Power Dissipation PD 100 W Tc=25℃ 2
Maximum Power Dissipation PD 50 W Tc=100℃ 2
Single Pulsed-Avalanche Energy EAS 390 mJ L=0.3mH 2
Thermal Resistance, Junction-to-Case RJC 1.5 ℃/W 2
Thermal Resistance, Junction-to-Ambient RJA 60 ℃/W Surface mounted on FR-4 board 2

CAD (KiCad official)

  • Symbol: HYG023N04NR1D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hyg023n04nr1d-etched.step / hyg023n04nr1d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg023n04nr1d.step / hyg023n04nr1d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (9 pp, sha256 6b85d81a4d1ad621, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF