component
HYG023N04LS1B
Public Made by Adomby adom
HUAYI MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| hyg023n04ls1b-etched.glb | 17d ago |
| hyg023n04ls1b-etched.step | 17d ago |
| hyg023n04ls1b-hero.glb | 17d ago |
| hyg023n04ls1b-hero.overlay.json | 17d ago |
| hyg023n04ls1b.glb | 17d ago |
| hyg023n04ls1b.kicad_mod | 17d ago |
| hyg023n04ls1b.kicad_sym | 17d ago |
| hyg023n04ls1b.lbr | 17d ago |
| hyg023n04ls1b.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
HYG023N04LS1B
HUAYI · MOSFETs · TO-263-2L
HYG023N04LS1B from HUAYI, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive limit is VGSS ±20 V, with gate threshold VGS(th) of 1 V min, 1.9 V typ and 3 V max at VDS=VGS, IDS=250 μA. |
| 2 | D | passive | Drain, shown as the middle G-D-S label and the tab; VDSS is 40 V, with continuous drain current of 170 A at Tc=25°C. |
| 3 | S | passive | Source; continuous body-diode source current is 170 A at Tc=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUAYI |
| Package | TO-263-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 40 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Junction Temperature Range | TJ | -55 | 175 | °C | 2 | ||
| Storage Temperature Range | TSTG | -55 | 175 | °C | 2 | ||
| Source Current-Continuous (Body Diode) | IS | 170 | A | Tc=25°C | 2 | ||
| Pulsed Drain Current | IDM | 570 | A | Tc=25°C | 2 | ||
| Continuous Drain Current | ID | 170 | A | Tc=25°C | 2 | ||
| Continuous Drain Current | ID | 120 | A | Tc=100°C | 2 | ||
| Maximum Power Dissipation | PD | 150 | W | Tc=25°C | 2 | ||
| Maximum Power Dissipation | PD | 75 | W | Tc=100°C | 2 | ||
| Thermal Resistance, Junction-to-Case | RJC | 1 | °C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | °C/W | Surface mounted on 1in2 FR-4 board | 2 | ||
| Single Pulsed-Avalanche Energy | EAS | 450 | mJ | L=0.3mH | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V,IDS= 250μA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 50 | μA | TJ=125°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.9 | 3 | V | VDS=VGS, IDS= 250μA | 2 |
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 2.1 | 2.6 | mΩ | VGS= 10V,IDS= 40A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 2.9 | 3.5 | mΩ | VGS= 4.5V,IDS= 40A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | ISD=40A,VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
HYG023N04LS1B - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263-2L (KiCad packages3D, STEP)
- 3D model files:
hyg023n04ls1b-etched.step/hyg023n04ls1b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hyg023n04ls1b.step/hyg023n04ls1b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUAYI datasheet (10 pp, sha256
6960e44f5697164b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).