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HYG012N03LR1B

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HUAYI MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorhyg012n03lr1bfactory-2.0.0extractor-text
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Generated by kicad-footprint-generator · KiCad file format 20260206
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HYG012N03LR1B

HUAYI · MOSFETs · TO-263-2L

HYG012N03LR1B from HUAYI, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the gate-source voltage is rated at ±20 V maximum, with a threshold of 1 V min and 3 V max at VDS=VGS and IDS=250 µA.
2 D passive Drain, which is also the exposed tab; the drain-source voltage is rated at 30 V and the continuous drain current at 250 A at Tc=25°C.
3 S passive Source; the continuous body-diode source current is rated at 250 A at Tc=25°C.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-263-2L
Category Triode/MOS Tube/Transistor
Pins 3

CAD (KiCad official)

  • Symbol: HYG012N03LR1B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2L (KiCad packages3D, STEP)
  • 3D model files: hyg012n03lr1b-etched.step / hyg012n03lr1b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg012n03lr1b.step / hyg012n03lr1b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (10 pp, sha256 2c52318392a5a3b9, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF