component
HYG011N04LS1C2
Public Made by Adomby adom
HUAYI MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
hyg011n04ls1c2: specified limits as data (metadata.characteristics, 21 rows from the datasheet)
2 files changed
+288−1
README.md+28@@ -27,6 +27,34 @@ HYG011N04LS1C2 from HUAYI, in a DFN5x6-8. Pinout and pin descriptions extracted | Category | Transistors/Thyristors | | Pins | 9 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | | | 40 | V | | 2 |+| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |+| Junction Temperature Range | TJ | -55 | | 175 | °C | | 2 |+| Storage Temperature Range | TSTG | -55 | | 175 | °C | | 2 |+| Source Current-Continuous (Body Diode) | IS | | | 165 | A | Tc=25°C; mounted on large heat sink | 2 |+| Pulsed Drain Current | IDM | | | 660 | A | Tc=25°C; repetitive rating, pulse width limited by max junction temperature | 2 |+| Continuous Drain Current | ID | | | 165 | A | Tc=25°C | 2 |+| Continuous Drain Current | ID | | | 116 | A | Tc=100°C | 2 |+| Maximum Power Dissipation | PD | | | 75 | W | Tc=25°C | 2 |+| Maximum Power Dissipation | PD | | | 37.5 | W | Tc=100°C | 2 |+| Thermal Resistance, Junction-to-Case | RJC | | | 2 | °C/W | | 2 |+| Thermal Resistance, Junction-to-Ambient | RJA | | | 45 | °C/W | Surface mounted on FR-4 board | 2 |+| Single Pulsed Avalanche Energy | EAS | | | 540 | mJ | L=0.3mH | 2 |+| Drain-Source Breakdown Voltage | BVDSS | 40 | | | V | VGS=0V, IDS=250μA | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 1 | μA | VDS=40V, VGS=0V | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 50 | μA | TJ=125°C | 2 |+| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 3 | V | VDS=VGS, IDS=250μA | 2 |+| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 1.1 | 1.4 | mΩ | VGS=10V, IDS=40A | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 1.5 | 1.9 | mΩ | VGS=4.5V, IDS=40A | 2 |+| Diode Forward Voltage | VSD | | 0.75 | 1.2 | V | ISD=20A, VGS=0V | 2 |+ ## CAD (KiCad official) - Symbol: `HYG011N04LS1C2`
page.json+260−1@@ -186,6 +186,265 @@ "Package": "DFN5x6-8", "Category": "Transistors/Thyristors", "Pins": "9"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "637d6d387e883458",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature Range",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Source Current-Continuous (Body Diode)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 165,+ "conditions": "Tc=25°C; mounted on large heat sink",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 660,+ "conditions": "Tc=25°C; repetitive rating, pulse width limited by max junction temperature",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 165,+ "conditions": "Tc=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 116,+ "conditions": "Tc=100°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 75,+ "conditions": "Tc=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 37.5,+ "conditions": "Tc=100°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case",+ "symbol": "RJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "Surface mounted on FR-4 board",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single Pulsed Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 540,+ "conditions": "L=0.3mH",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, IDS=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=40V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "TJ=125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.8,+ "max": 3,+ "conditions": "VDS=VGS, IDS=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 1.1,+ "max": 1.4,+ "conditions": "VGS=10V, IDS=40A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 1.5,+ "max": 1.9,+ "conditions": "VGS=4.5V, IDS=40A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.75,+ "max": 1.2,+ "conditions": "ISD=20A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -227,4 +486,4 @@ "visibility": { "public": true }-}+}