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Contents

README

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HYG011N04LS1C2

HUAYI · MOSFETs · DFN5x6-8

HYG011N04LS1C2 from HUAYI, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, pin 1 (marked on the package drawing); 40V VDSS device with 165A continuous drain current rating at Tc=25°C.
2 S passive Source of the N-channel MOSFET, tied to the other source pins; body-diode source current is rated 165A continuous.
3 S passive Source of the N-channel MOSFET, tied to the other source pins; gate-source voltage is limited to ±20V.
4 G input Gate of the N-channel MOSFET with a ±20V maximum gate-source voltage and a 1.0V to 3.0V threshold at IDS=250µA.
5 D passive Drain of the N-channel MOSFET, tied to the other drain pins; drain-source voltage is rated 40V.
6 D passive Drain of the N-channel MOSFET, tied to the other drain pins; pulsed drain current is rated 660A at Tc=25°C.
7 D passive Drain of the N-channel MOSFET, tied to the other drain pins; RDS(ON) is 1.1mΩ typ. at VGS=10V.
8 D passive Drain of the N-channel MOSFET, tied to the other drain pins and the exposed drain pad; RDS(ON) is 1.5mΩ typ. at VGS=4.5V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HUAYI
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 40 V 2
Gate-Source Voltage VGSS -20 20 V 2
Junction Temperature Range TJ -55 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Source Current-Continuous (Body Diode) IS 165 A Tc=25°C; mounted on large heat sink 2
Pulsed Drain Current IDM 660 A Tc=25°C; repetitive rating, pulse width limited by max junction temperature 2
Continuous Drain Current ID 165 A Tc=25°C 2
Continuous Drain Current ID 116 A Tc=100°C 2
Maximum Power Dissipation PD 75 W Tc=25°C 2
Maximum Power Dissipation PD 37.5 W Tc=100°C 2
Thermal Resistance, Junction-to-Case RJC 2 °C/W 2
Thermal Resistance, Junction-to-Ambient RJA 45 °C/W Surface mounted on FR-4 board 2
Single Pulsed Avalanche Energy EAS 540 mJ L=0.3mH 2
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, IDS=250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS=40V, VGS=0V 2
Drain-to-Source Leakage Current IDSS 50 μA TJ=125°C 2
Gate Threshold Voltage VGS(th) 1 1.8 3 V VDS=VGS, IDS=250μA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 1.1 1.4 mΩ VGS=10V, IDS=40A 2
Drain-Source On-State Resistance RDS(ON) 1.5 1.9 mΩ VGS=4.5V, IDS=40A 2
Diode Forward Voltage VSD 0.75 1.2 V ISD=20A, VGS=0V 2

CAD (KiCad official)

  • Symbol: HYG011N04LS1C2
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: hyg011n04ls1c2-etched.step / hyg011n04ls1c2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg011n04ls1c2.step / hyg011n04ls1c2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (10 pp, sha256 637d6d387e883458, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF