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HY3210P

Public Made by Adom

by adom

HUAYI MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HY3210P

HUAYI · MOSFETs · TO-220

HY3210P from HUAYI, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, rated ±25V gate-source (VGSS), with threshold VGS(th) of 2.0V min, 3.0V typ, 4.0V max at VDS=VGS, IDS=250μA.
2 D passive Drain of the N-channel MOSFET, rated 100V drain-source (VDSS) and 120A continuous drain current at TC=25°C, with RDS(ON) of 6.8mΩ typ and 8.5mΩ max at VGS=10V, IDS=60A.
3 S passive Source of the N-channel MOSFET, with a diode continuous forward current (IS) of 120A at TC=25°C and a body-diode forward voltage of 0.8V typ and 1V max at ISD=60A.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-220
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V TC=25°C 2
Gate-Source Voltage VGSS -25 25 V TC=25°C 2
Maximum Junction Temperature TJ 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Diode Continuous Forward Current IS 120 A TC=25°C 2
Continuous Drain Current ID 120 A TC=25°C 2
Continuous Drain Current ID 84 A TC=100°C 2
Maximum Power Dissipation PD 237 W TC=25°C 2
Maximum Power Dissipation PD 119 W TC=100°C 2
Thermal Resistance-Junction to Case RθJC 0.63 °C/W 2
Thermal Resistance-Junction to Ambient RθJA 62.5 °C/W 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=100V, VGS=0V, TJ=85°C 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, IDS=250μA 2
Gate Leakage Current IGSS -100 100 nA VGS=±25V, VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 6.8 8.5 mΩ VGS=10V, IDS=60A 2
Diode Forward Voltage VSD 0.8 1 V ISD=60A, VGS=0V 2
Reverse Recovery Time trr 46 ns ISD=60A, dISD/dt=100A/μs 2
Reverse Recovery Charge Qrr 98 nC ISD=60A, dISD/dt=100A/μs 2
Gate Resistance RG 1.7 Ω VGS=0V, VDS=0V, F=1MHz 3
Output Capacitance Coss 902 pF VGS=0V, VDS=25V, Frequency=1.0MHz 3
Reverse Transfer Capacitance Crss 508 pF VGS=0V, VDS=25V, Frequency=1.0MHz 3
Turn-on Delay Time td(ON) 23 ns VDD=50V, RG=6Ω, IDS=60A, VGS=10V 3
Turn-off Delay Time td(OFF) 77 ns VDD=50V, RG=6Ω, IDS=60A, VGS=10V 3
Turn-off Fall Time Tf 44 ns VDD=50V, RG=6Ω, IDS=60A, VGS=10V 3
Total Gate Charge Qg 120 nC VDS=80V, VGS=10V, IDS=60A 3
Gate-Source Charge Qgs 17 nC VDS=80V, VGS=10V, IDS=60A 3
Gate-Drain Charge Qgd 28 nC VDS=80V, VGS=10V, IDS=60A 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin Note: lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. lead-free products meet or exceed the lead-fre 1

CAD (KiCad official)

  • Symbol: HY3210P
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: hy3210p-etched.step / hy3210p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hy3210p.step / hy3210p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (14 pp, sha256 9b7f732ac56f2e67, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF