component
HY1908D-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownHY1908D-VB
VBsemi Elec · MOSFETs · TO-252
HY1908D-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold 2.5 to 4.0 V at VDS = VGS, ID = 250 μA. |
| 2 | D | passive | Drain (also the tab/case); VDS max 80 V, continuous drain current 75 A at TC = 25 °C, pulsed 150 A. |
| 3 | S | passive | Source; continuous source-drain diode current 75 A at TC = 25 °C, body diode VSD 0.76 V typ at IS = 5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 80 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2.5 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 80 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 80 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 30 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Gate Resistance | Rg | 0.5 | 1.3 | 2 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg | 35.5 | 54 | nC | VDS = 40 V, VGS = 10 V, ID = 10 A | 2 | |
| Total Gate Charge | Qg | 22 | 33 | nC | VDS = 40 V, VGS = 6 V, ID = 10 A | 2 | |
| Total Gate Charge | Qg | 17.1 | 26 | nC | VDS = 40 V, VGS = 4.5 V, ID = 10 A | 2 | |
| Output Charge | Qoss | 57 | 86 | nC | VDS = 40 V, VGS = 0 V | 2 | |
| Turn-On Delay Time | td(on) | 12 | 24 | ns | VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 8 | 16 | ns | VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 32 | 64 | ns | VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 7 | 14 | ns | VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 14 | 28 | ns | VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 6.0 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 11 | 22 | ns | VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 6.0 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 30 | 60 | ns | VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 6.0 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 8 | 16 | ns | VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 6.0 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 75 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 150 | A | t = 100 μs | 2 | ||
| Body Diode Voltage | VSD | 0.76 | 1.1 | V | IS = 5 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 38 | 75 | ns | IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 36 | 70 | nC | IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.005 | Ω | VGS = 10 V, ID = 20 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.007 | Ω | VGS = 6 V, ID = 15 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.0087 | Ω | VGS = 5.0 V, ID = 10 A | 2 | ||
| Forward Transconductance | gfs | 60 | S | VDS = 10 V, ID = 20 A | 2 | ||
| Input Capacitance | Ciss | 1855 | pF | VDS = 40 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 950 | pF | VDS = 40 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 76 | pF | VDS = 40 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 5.3 | nC | VDS = 40 V, VGS = 10 V, ID = 10 A | 2 | ||
| Gate-Drain Charge | Qgd | 7.3 | nC | VDS = 40 V, VGS = 10 V, ID = 10 A | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | 37 | mV/°C | ID = 250 μA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | -6.1 | mV/°C | 2 | |||
| Reverse Recovery Fall Time | ta | 19 | ns | IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C | 2 | ||
| Reverse Recovery Rise Time | tb | 19 | ns | IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C | 2 | ||
| Drain-Source Voltage | VDS | 80 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | 75 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Pulsed Drain Current | IDM | 150 | A | t = 100 μs | 1 | ||
| Continuous Source-Drain Diode Current | IS | 75 | A | TC = 25 °C | 1 | ||
| Single Pulse Avalanche Current | IAS | 30 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 45 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 62.5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 40 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 5 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.2 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Peak Temperature | 260 | °C | 1 | ||||
| Maximum Junction-to-Ambient | RthJA | 20 | 25 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Case (Drain) | RthJC | 1.5 | 2 | °C/W | Steady State | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | d. The TO-220 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cann | 1 |
CAD (KiCad official)
- Symbol:
HY1908D-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
hy1908d-vb-etched.step/hy1908d-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hy1908d-vb.step/hy1908d-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
0c5c65a9ab799dab, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).