component
HY1210D
Public Made by Adomby adom
HUAYI MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
hy1210d: specified limits as data (metadata.characteristics, 34 rows from the datasheet)
2 files changed
+457−1
README.md+41@@ -21,6 +21,47 @@ HY1210D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from t | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | | | 100 | V | Common ratings, Tc=25°C | 2 |+| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |+| Maximum Junction Temperature | TJ | | | 150 | °C | | 2 |+| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 2 |+| Drain Current-Continuous | IS | | | 26 | A | Tc=25°C, mounted on large heat sink | 2 |+| Pulsed Drain Current | IDM | | | 100 | A | Tc=25°C, repetitive rating, pulse width limited by max junction temperature | 2 |+| Continuous Drain Current | ID | | | 26 | A | Tc=25°C | 2 |+| Continuous Drain Current | ID | | | 17 | A | Tc=100°C | 2 |+| Maximum Power Dissipation | PD | | | 50 | W | Tc=25°C | 2 |+| Maximum Power Dissipation | PD | | | 20 | W | Tc=100°C | 2 |+| Single Pulsed-Avalanche Energy | EAS | | | 108 | mJ | L=0.3mH | 2 |+| Thermal Resistance, Junction-to-Case | RJC | | | 2.5 | °C/W | | 2 |+| Thermal Resistance, Junction-to-Ambient | RJA | | | 110 | °C/W | Surface mounted on a square inches Cu board (copper area value missing in datasheet text) | 2 |+| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V,IDS=250uA | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 1 | uA | VDS=100V, VGS=0V | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 30 | uA | TJ=85°C | 2 |+| Gate Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VDS=VGS, IDS=250uA | 2 |+| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |+| Drain-Source On-state Resistance | RDS(ON) | | 32 | 36 | mΩ | VGS=10V,IDS=10A | 2 |+| Drain-Source On-state Resistance | RDS(ON) | | 34 | 38 | mΩ | VGS=4.5V,IDS=10A | 2 |+| Diode Forward Voltage | VSD | | 0.8 | 1.3 | V | ISD=10A,VGS=0V | 2 |+| Reverse Recovery Time | trr | | 21 | | ns | ISD=13A,dISD/dt=100A/us | 2 |+| Reverse Recovery Charge | Qrr | | 52 | | nC | ISD=13A,dISD/dt=100A/us | 2 |+| Gate Resistance | RG | | 1.7 | | Ω | VGS=0V,VDS=0V,F=1MHz | 3 |+| Input Capacitance | Ciss | | 2543 | | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | 3 |+| Output Capacitance | Coss | | 38 | | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | 3 |+| Reverse Transfer Capacitance | Crss | | 5.8 | | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | 3 |+| Turn-on Delay Time | td(ON) | | 11 | | ns | VDD=50V,RG=3Ω, IDS=13A,VGS=10V | 3 |+| Turn-on Rise Time | Tr | | 8 | | ns | VDD=50V,RG=3Ω, IDS=13A,VGS=10V | 3 |+| Turn-off Delay Time | td(OFF) | | 24 | | ns | VDD=50V,RG=3Ω, IDS=13A,VGS=10V | 3 |+| Turn-off Fall Time | Tf | | 13 | | ns | VDD=50V,RG=3Ω, IDS=13A,VGS=10V | 3 |+| Total Gate Charge | Qg | | 72 | | nC | VDS=80V, VGS=10V, ID=13A | 3 |+| Gate-Source Charge | Qgs | | 8 | | nC | VDS=80V, VGS=10V, ID=13A | 3 |+| Gate-Drain Charge | Qgd | | 14 | | nC | VDS=80V, VGS=10V, ID=13A | 3 |+ ## CAD (KiCad official) - Symbol: `HY1210D`
page.json+416−1@@ -149,6 +149,421 @@ "Package": "TO-252-2L", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "79a3b907b71f9697",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "Common ratings, Tc=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 26,+ "conditions": "Tc=25°C, mounted on large heat sink",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "Tc=25°C, repetitive rating, pulse width limited by max junction temperature",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 26,+ "conditions": "Tc=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 17,+ "conditions": "Tc=100°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "Tc=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "Tc=100°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single Pulsed-Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 108,+ "conditions": "L=0.3mH",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case",+ "symbol": "RJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "Surface mounted on a square inches Cu board (copper area value missing in datasheet text)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V,IDS=250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=100V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "TJ=85°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 2,+ "max": 3,+ "conditions": "VDS=VGS, IDS=250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V,VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-state Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 32,+ "max": 36,+ "conditions": "VGS=10V,IDS=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-state Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 34,+ "max": 38,+ "conditions": "VGS=4.5V,IDS=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1.3,+ "conditions": "ISD=10A,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 21,+ "max": null,+ "conditions": "ISD=13A,dISD/dt=100A/us",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 52,+ "max": null,+ "conditions": "ISD=13A,dISD/dt=100A/us",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "RG",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.7,+ "max": null,+ "conditions": "VGS=0V,VDS=0V,F=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 2543,+ "max": null,+ "conditions": "VGS=0V, VDS=25V, Frequency=1.0MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 38,+ "max": null,+ "conditions": "VGS=0V, VDS=25V, Frequency=1.0MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 5.8,+ "max": null,+ "conditions": "VGS=0V, VDS=25V, Frequency=1.0MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-on Delay Time",+ "symbol": "td(ON)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 11,+ "max": null,+ "conditions": "VDD=50V,RG=3Ω, IDS=13A,VGS=10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-on Rise Time",+ "symbol": "Tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 8,+ "max": null,+ "conditions": "VDD=50V,RG=3Ω, IDS=13A,VGS=10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-off Delay Time",+ "symbol": "td(OFF)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 24,+ "max": null,+ "conditions": "VDD=50V,RG=3Ω, IDS=13A,VGS=10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-off Fall Time",+ "symbol": "Tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 13,+ "max": null,+ "conditions": "VDD=50V,RG=3Ω, IDS=13A,VGS=10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 72,+ "max": null,+ "conditions": "VDS=80V, VGS=10V, ID=13A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 8,+ "max": null,+ "conditions": "VDS=80V, VGS=10V, ID=13A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 14,+ "max": null,+ "conditions": "VDS=80V, VGS=10V, ID=13A",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +605,4 @@ "visibility": { "public": true }-}+}