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HY1106S

Public Made by Adom

by adom

HUAYI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HY1106S

HUAYI · MOSFETs · SOP-8

HY1106S from HUAYI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied to the other source pins (pins 1-3).
2 S passive Source of the N-channel MOSFET, tied to the other source pins (pins 1-3).
3 S passive Source of the N-channel MOSFET, tied to the other source pins (pins 1-3).
4 G input Gate of the N-channel MOSFET; gate-source voltage rated ±20 V.
5 D passive Drain of the N-channel MOSFET, tied to the other drain pins (pins 5-8).
6 D passive Drain of the N-channel MOSFET, tied to the other drain pins (pins 5-8).
7 D passive Drain of the N-channel MOSFET, tied to the other drain pins (pins 5-8).
8 D passive Drain of the N-channel MOSFET, tied to the other drain pins (pins 5-8).

Key specifications

Parameter Value
Manufacturer HUAYI
Package SOP-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, IDS=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 30 μA TJ=85°C 2
Gate Threshold Voltage VGS(th) 1 2 3 V VDS=VGS, IDS=250μA 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Diode Forward Voltage VSD 0.7 1 V VGS=0V 2
Drain-Source Voltage VDSS 60 V TC=25°C 2
Gate-Source Voltage VGSS -20 20 V TC=25°C 2
Maximum Junction Temperature TJ 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Maximum Power Dissipation PD 3.5 W TC=25°C 2
Maximum Power Dissipation PD 2.4 W TC=70°C 2
Thermal Resistance-Junction to Case RθJC 43 °C/W 2
Thermal Resistance-Junction to Ambient RθJA 75 °C/W 2
Drain-Source On-state Resistance RDS(ON) 11 mΩ VGS=10V 1
Drain-Source On-state Resistance RDS(ON) 13.5 mΩ VGS=4.5V 1
Gate Resistance RG 1 Ω VGS=0V,VDS=0V,F=1MHz 3
Gate-Source Charge Qgs 6.4 nC VGS=10V 3
Gate-Drain Charge Qgd 15.3 nC VGS=10V 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin Note: lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. lead-free products meet or exceed the lead-fre 1

CAD (KiCad official)

  • Symbol: HY1106S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hy1106s-etched.step / hy1106s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hy1106s.step / hy1106s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (12 pp, sha256 2459536919648e35, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF