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HXY9926S

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HXY9926S

HXY MOSFET · MOSFETs · SOP-8

HXY9926S from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of N-channel MOSFET 1; the device absolute maximum drain-source voltage is 20 V.
2 G1 input Gate terminal of N-channel MOSFET 1; gate-source voltage is rated at +12 V maximum, and the part is specified for gate drive as low as 2.5 V.
3 S2 passive Source terminal of N-channel MOSFET 2; the device absolute maximum drain-source voltage is 20 V.
4 G2 input Gate terminal of N-channel MOSFET 2; gate-source voltage is rated at +12 V maximum, and the part is specified for gate drive as low as 2.5 V.
5 D2 passive Drain terminal of N-channel MOSFET 2; continuous drain current is rated 6 A at TA=25°C per the datasheet.
6 D2 passive Drain terminal of N-channel MOSFET 2; continuous drain current is rated 6 A at TA=25°C per the datasheet.
7 D1 passive Drain terminal of N-channel MOSFET 1; continuous drain current is rated 6 A at TA=25°C per the datasheet.
8 D1 passive Drain terminal of N-channel MOSFET 1; continuous drain current is rated 6 A at TA=25°C per the datasheet.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 21 25 mΩ VGS=4.5V, ID=6A 2
Static Drain-Source On-Resistance RDS(ON) 32 45 mΩ VGS=2.5V, ID=4A 2
Gate Threshold Voltage VGS(th) 1.2 3 V VDS=VGS, ID=250uA 2
Drain-Source Leakage Current IDSS 25 uA VDS=20V, VGS=0V 2
Drain-Source Leakage Current (Tj=70oC) IDSS 250 uA Tj=70oC; VDS=20V, VGS=0V 2
Gate-Source Leakage IGSS 100 nA VGS=+12V, VDS=0V 2
Total Gate Charge Qg 11 17.6 nC ID=6A, VDS=16V, VGS=4.5V 2
Input Capacitance Ciss 570 910 pF VGS=0V, VDS=20V, f=1.0MHz 2
Gate Resistance Rg 1.6 2.4 Ω f=1.0MHz 2
Forward On Voltage VSD 1.2 V IS=1.7A, VGS=0V 2
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS 12 V 1
Drain Current ID@TA=25℃ 6 A VGS @ 4.5V, TA=25℃ 1
Drain Current ID@TA=70℃ 4.8 A VGS @ 4.5V, TA=70℃ 1
Pulsed Drain Current IDM 26 A 1
Total Power Dissipation PD@TA=25℃ 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 62.5 ℃/W Surface mounted on 1 in2 copper pad of FR4 board, t<10sec 1
Thermal Resistance, Junction-ambient (min. copper pad) Rthja 135 oC/W Mounted on Min. copper pad 2

CAD (KiCad official)

  • Symbol: HXY9926S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hxy9926s-etched.step / hxy9926s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hxy9926s.step / hxy9926s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 32d1dfebea49866e, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF