component
HXY80N06D
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
123456789101112131415161718192021222324252627282930313233343536373839404142434445464748495051525354555657585960616263646566676869707172737475767778798081828384858687888990919293949596979899100101102103104105106107108109110111112113114115116117118119120121122123124125126127128129130131132133134135136137138139140141142143144145146147148149150151152153154155156157158159160161162163164165166167168169170171172173174175176177178179180181182183184185186187188189190191192193194195196197198199200201202203204205206207208209210211212213214215216217218219220221222223224225226227228229230231232233234235236237238239240241242243244245246247248249250251252253254255256257258259260261262263264265266267268269270271272273274275276277278279280281282283284285286287288289290291292293294295296297298299300301302303304305306307308309310311312313314315316317318319320321322323324325326327328329330331332333334335336337338339340341342343344345346347348349350351352353354355356357358359360361362363364365366367368369370371372373374375376377378379380381382383384385386387388389390391392393394395396397398399400401402403404405406407408409410411412413414415416417418419420421422423424425426427428429430431432433434435436437438439
{
"schema_version": 1,
"type": "component",
"slug": "hxy80n06d",
"title": "HXY80N06D",
"brief": "HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"transistors-thyristors",
"hxy80n06d",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "HXY80N06D",
"manufacturer": "HXY MOSFET",
"package": "TO-252-2L",
"pin_count": 3,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757974694434234368",
"parts": {
"symbol": "hxy80n06d.kicad_sym",
"footprint": "hxy80n06d.kicad_mod",
"model_3d": "hxy80n06d-hero.glb",
"model_3d_plain": "hxy80n06d-etched.glb",
"model_3d_step": "hxy80n06d-etched.step",
"model_3d_step_plain": "hxy80n06d.step",
"lbr": "hxy80n06d.lbr"
},
"distributor_links": {
"lcsc": "C3033432"
},
"distributor_check": {
"checked_at": "2026-10-18T06:44:56Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "no match"
},
"mouser": {
"pn": null,
"status": "no match"
}
},
"pins": [
{
"number": "1",
"name": "G",
"type": "input",
"description": "Gate terminal of the N-channel MOSFET; the datasheet rates the gate-source voltage at ±20 V, and the device is specified for gate drive down to 4.5 V with RDS(ON) of 8 mΩ max at VGS=10 V."
},
{
"number": "2",
"name": "D",
"type": "passive",
"description": "Drain terminal; the datasheet rates drain-source voltage at 60 V and continuous drain current at 80 A (TC=25℃, VGS=10 V)."
},
{
"number": "3",
"name": "S",
"type": "passive",
"description": "Source terminal, the reference for the 60 V drain-source and ±20 V gate-source ratings; the datasheet gives no separate source-specific limit."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The datasheet labels the package TO-252-2L, but the pinout lists three pins (PIN1 G, PIN2 D, PIN3 S); Pin numbers and names come from the schematic text labels on page 1 ('PIN2 D', 'PIN1 G', 'PIN3 S') a; The datasheet does not state a specific electrical limit for the source pin. Pin 3 description refer"
],
"pages_sent": 6,
"cost_usd": 0.0284,
"at": "2026-10-18T06:43:16"
},
"datasheet": {
"url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757974694434234368",
"pages": 6,
"sha256": "a60bbbeebc354ba2",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 3,
"described": 3,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "hxy80n06d.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
9.9,
6.5,
2.32
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
"checked": "2026-10-18",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "hxy80n06d-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
9.9,
6.5,
2.32
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "4bfbfd4a622b2a5b5ce1b3907dd50805c64f42c655bba0b04c3b38f3c7239b27",
"checked": "2026-10-18",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "HXY MOSFET",
"Package": "TO-252-2L",
"Category": "Transistors/Thyristors",
"Pins": "3"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "a60bbbeebc354ba2392c950014b8503dae68b2eb03866409ba3552cc392ce222",
"rows": [
{
"name": "Drain-Source Voltage",
"symbol": "VDS",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 60,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-Source Voltage",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -20,
"typ": null,
"max": 20,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current",
"symbol": "ID@TC=25℃",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 80,
"conditions": "VGS @ 10V, TC=25℃",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current",
"symbol": "ID@TC=100℃",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 43,
"conditions": "VGS @ 10V, TC=100℃",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Drain Current",
"symbol": "IDM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 272,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Avalanche Current",
"symbol": "IAS",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 28,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Total Power Dissipation",
"symbol": "PD@TC=25℃",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 104,
"conditions": "TC=25℃",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Storage Temperature Range",
"symbol": "TSTG",
"kind": "absolute_maximum",
"unit": "℃",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating Junction Temperature Range",
"symbol": "TJ",
"kind": "absolute_maximum",
"unit": "℃",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Thermal Resistance Junction-Ambient",
"symbol": "RθJA",
"kind": "thermal",
"unit": "℃/W",
"min": null,
"typ": null,
"max": 62.5,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain-Source Breakdown Voltage",
"symbol": "BVDSS",
"kind": "electrical",
"unit": "V",
"min": 60,
"typ": null,
"max": null,
"conditions": "VGS=0V, ID=250uA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Static Drain-Source On-Resistance",
"symbol": "RDS(ON)",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 6,
"max": 8,
"conditions": "VGS=10V, ID=45A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Static Drain-Source On-Resistance",
"symbol": "RDS(ON)",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 8.3,
"max": 15,
"conditions": "VGS=4.5V, ID=30A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate Threshold Voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": 2,
"typ": 2.5,
"max": 3.5,
"conditions": "VDS=VGS, ID=250uA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source Leakage Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "uA",
"min": null,
"typ": null,
"max": 10,
"conditions": "VDS=60V, VGS=0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source Leakage Current (Tj=125oC)",
"symbol": "IDSS",
"kind": "electrical",
"unit": "uA",
"min": null,
"typ": null,
"max": 250,
"conditions": "Tj=125oC, VDS=48V, VGS=0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Source Leakage",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": null,
"typ": null,
"max": 100,
"conditions": "VGS=+20V, VDS=0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Total Gate Charge",
"symbol": "Qg",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 33,
"max": 45,
"conditions": "ID=30A, VDS=48V, VGS=4.5V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Input Capacitance",
"symbol": "Ciss",
"kind": "electrical",
"unit": "pF",
"min": null,
"typ": 2680,
"max": 3300,
"conditions": "VGS=0V, VDS=25V, f=1.0MHz",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Forward On Voltage",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": null,
"max": 1.3,
"conditions": "IS=45A, VGS=0V",
"source_page": 2,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"hxy80n06d"
],
"discovery_pitch": "HXY80N06D (HXY MOSFET) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"hxy80n06d.kicad_sym",
"hxy80n06d.kicad_mod",
"hxy80n06d.glb",
"hxy80n06d.step",
"hxy80n06d.lbr",
"docs/hero.png",
"docs/hxy80n06d-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"hxy80n06d-hero.glb",
"hxy80n06d-hero.overlay.json",
"hxy80n06d-etched.glb"
],
"visibility": {
"public": true
}
}