# HXY80N06D

**HXY MOSFET** · MOSFETs · TO-252-2L

HXY80N06D from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the datasheet rates the gate-source voltage at ±20 V, and the device is specified for gate drive down to 4.5 V with RDS(ON) of 8 mΩ max at VGS=10 V. |
| 2 | D | passive | Drain terminal; the datasheet rates drain-source voltage at 60 V and continuous drain current at 80 A (TC=25℃, VGS=10 V). |
| 3 | S | passive | Source terminal, the reference for the 60 V drain-source and ±20 V gate-source ratings; the datasheet gives no separate source-specific limit. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TC=25℃ |  |  | 80 | A | VGS @ 10V, TC=25℃ | 1 |
| Continuous Drain Current | ID@TC=100℃ |  |  | 43 | A | VGS @ 10V, TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 272 | A |  | 1 |
| Avalanche Current | IAS |  |  | 28 | A |  | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 104 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 62.5 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 6 | 8 | mΩ | VGS=10V, ID=45A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 8.3 | 15 | mΩ | VGS=4.5V, ID=30A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 2.5 | 3.5 | V | VDS=VGS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 10 | uA | VDS=60V, VGS=0V | 2 |
| Drain-Source Leakage Current (Tj=125oC) | IDSS |  |  | 250 | uA | Tj=125oC, VDS=48V, VGS=0V | 2 |
| Gate-Source Leakage | IGSS |  |  | 100 | nA | VGS=+20V, VDS=0V | 2 |
| Total Gate Charge | Qg |  | 33 | 45 | nC | ID=30A, VDS=48V, VGS=4.5V | 2 |
| Input Capacitance | Ciss |  | 2680 | 3300 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 |
| Forward On Voltage | VSD |  |  | 1.3 | V | IS=45A, VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `HXY80N06D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `hxy80n06d-etched.step` / `hxy80n06d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hxy80n06d.step` / `hxy80n06d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757974694434234368) (6 pp, sha256 `a60bbbeebc354ba2`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hxy80n06d-datasheet.pdf)