component

HXY60N03D

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HXY60N03D

HXY MOSFET · MOSFETs · TO-252-2L

HXY60N03D from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with gate-source voltage rated ±20 V (VGS).
2 D passive Drain terminal, with drain-source voltage rated 30 V (VDS) and continuous drain current rated 60 A at TC=25℃.
3 S passive Source terminal, which is the reference for VGS and VDS in the absolute maximum ratings.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 60 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 40 A VGS @ 10V 1
Continuous Drain Current ID@TA=25℃ 13.6 A VGS @ 10V 1
Continuous Drain Current ID@TA=70℃ 11.4 A VGS @ 10V 1
Pulsed Drain Current IDM 110 A 1
Single Pulse Avalanche Energy EAS 57.8 mJ 1
Avalanche Current IAS 34 A 1
Total Power Dissipation PD@TC=25℃ 41 W 1
Total Power Dissipation PD@TA=25℃ 2.42 W 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 7 9 mΩ VGS=10V , ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 11 14 Ω VGS=4.5V , ID=15A 2
Gate Threshold Voltage VGS(th) 1.2 1.5 2.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Gate Resistance Rg 2.2 3.5 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge (4.5V) Qg 12.6 17.6 nC VDS=15V , VGS=4.5V , ID=15A 2
Gate-Source Charge Qgs 4.2 5.9 nC VDS=15V , VGS=4.5V , ID=15A 2
Gate-Drain Charge Qgd 5.1 7.1 nC VDS=15V , VGS=4.5V , ID=15A 2
Turn-On Delay Time Td(on) 4.6 9.2 ns VDD=15V , VGS=10V , RG=3.3 ID=15A 2
Rise Time Tr 12.2 22 ns VDD=15V , VGS=10V , RG=3.3 ID=15A 2
Turn-Off Delay Time Td(off) 26.6 53 ns VDD=15V , VGS=10V , RG=3.3 ID=15A 2
Fall Time Tf 8 16 ns VDD=15V , VGS=10V , RG=3.3 ID=15A 2
Input Capacitance Ciss 1317 1843 pF VDS=15V , VGS=0V , f=1MHz 2
Output Capacitance Coss 163 228 pF VDS=15V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 131 183 pF VDS=15V , VGS=0V , f=1MHz 2
Continuous Source Current IS 55 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 110 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HXY60N03D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hxy60n03d-etched.step / hxy60n03d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hxy60n03d.step / hxy60n03d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 f92dd708f00a449f, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF