# HXY5N10AI

**HXY MOSFET** · MOSFETs · SOT-23

HXY5N10AI from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel enhancement MOSFET, with VGS rated at ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain of the N-channel MOSFET, with VDS rated at 100 V and continuous drain current ID of 5 A at TA=25℃. |
| 3 | S | passive | Source of the N-channel MOSFET, with continuous source current IS limited to 2 A in the electrical characteristics. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | 108 |  | V | VGS=0V , ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 110 | 125 | mΩ | VGS=10V , ID=4A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 120 | 145 | mΩ | VGS=4.5V , ID=2A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=80V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 50 | uA | VDS=80V , VGS=0V , TJ=85℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Gate Resistance | Rg |  | 2.3 | 4.6 |  | VDS=0V , VGS=0V , f=1MHz | 2 |
| Continuous Source Current | IS |  |  | 2 | A | VG=VD=0V , Force Current | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TA=25℃ |  |  | 5 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TA=70℃ |  |  | 3.2 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 16 | A |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 3.1 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 100 | ℃/W | steady state | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 40 | ℃/W | t<10s | 1 |

## CAD (KiCad official)

- Symbol: `HXY5N10AI`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `hxy5n10ai-etched.step` / `hxy5n10ai-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hxy5n10ai.step` / `hxy5n10ai.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758128292329201664) (6 pp, sha256 `3bfbb8fdacc69ae1`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hxy5n10ai-datasheet.pdf)