component

HXY50P02D

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorhxy50p02dfactory-2.0.0extractor-text

Verified HXY50P02D

by Ray · last 4 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

4 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HXY50P02D · TO-252-2L · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-4fpbn5hu/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.5)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ hxy50p02d.kicad_sym✓ hxy50p02d.kicad_mod✓ hxy50p02d.step
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Ray Publish 0.1.0 508f2e2 1d ago

HXY50P02D

HXY MOSFET · MOSFETs · TO-252-2L

HXY50P02D from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±12 V, with RDS(ON) specified at VGS=-4.5 V and -2.5 V and threshold of -0.4 to -1.0 V.
2 D passive Drain, connected to the exposed metal tab; drain-source voltage -20 V and continuous drain current -50 A at TC=25℃.
3 S passive Source; continuous source (body diode) current of -50 A maximum and forward diode voltage of -1.2 V maximum.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID@TC=25℃ -50 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ -23 A VGS @ 10V 1
Pulsed Drain Current IDM -75 A 1
Total Power Dissipation PD@TC=25℃ 22 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 9 13 mΩ VGS=-4.5V, ID=-10A 2
Static Drain-Source On-Resistance RDS(ON) 16 22 mΩ VGS=-2.5V, ID=-8A 2
Gate Threshold Voltage VGS(th) -0.4 -0.7 -1 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=-15V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12 V, VDS=0V 2
Continuous Source Current IS -50 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
Thermal Resistance Junction-ambient RθJA 75 ℃/W 1
Thermal Resistance Junction-Case RθJC 4.2 ℃/W 1
BVDSS Temperature Coefficient △BVDSS/△TJ -0.012 V/℃ Reference to 25℃, ID=-1mA 2
VGS(th) Temperature Coefficient △VGS(th) 2.94 mV/℃ 2
Forward Transconductance gfs 43 S VDS=-5V, ID=-10A 2
Total Gate Charge (-4.5V) Qg 35 nC VDS=-10V, VGS=-4.5V, ID=-10A 2
Gate-Source Charge Qgs 5 nC 2
Gate-Drain Charge Qgd 10 nC 2
Turn-On Delay Time Td(on) 12 ns VDD=-10V, VGS=-4.5V, RG=3.3, ID=-10A 2
Rise Time Tr 40 ns 2
Turn-Off Delay Time Td(off) 30 ns 2
Fall Time Tf 10 ns 2
Input Capacitance Ciss 1400 pF VDS=-15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 350 pF 2
Reverse Transfer Capacitance Crss 300 pF 2
Reverse Recovery Time trr 27 nS IF=-10A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 17.8 nC 2

CAD (KiCad official)

  • Symbol: HXY50P02D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hxy50p02d-etched.step / hxy50p02d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hxy50p02d.step / hxy50p02d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 349ed986f881866b, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF