component
HXY4884S
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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hxy4884s: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
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24d ago
HXY4884S
HXY MOSFET · MOSFETs · SOP-8
HXY4884S from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of N-channel MOSFET 1; the device absolute maximum ratings are VDS 40 V and VGS ±20 V. |
| 2 | G1 | input | Gate of N-channel MOSFET 1; VGS is rated at ±20 V maximum, and RDS(on) is specified at VGS = 4.5 V and 10 V. |
| 3 | S2 | passive | Source terminal of N-channel MOSFET 2; the device absolute maximum ratings are VDS 40 V and VGS ±20 V. |
| 4 | G2 | input | Gate of N-channel MOSFET 2; VGS is rated at ±20 V maximum, and RDS(on) is specified at VGS = 4.5 V and 10 V. |
| 5 | D2 | passive | Drain terminal of N-channel MOSFET 2; continuous drain current ID is 12 A at TA = 25 °C (VGS = 4.5 V) with pulsed IDM of 40 A. |
| 6 | D2 | passive | Drain terminal of N-channel MOSFET 2 (second drain pin, internally tied to pin 5); continuous drain current ID is 12 A at TA = 25 °C (VGS = 4.5 V) with pulsed IDM of 40 A. |
| 7 | D1 | passive | Drain terminal of N-channel MOSFET 1; continuous drain current ID is 12 A at TA = 25 °C (VGS = 4.5 V) with pulsed IDM of 40 A. |
| 8 | D1 | passive | Drain terminal of N-channel MOSFET 1 (second drain pin, internally tied to pin 7); continuous drain current ID is 12 A at TA = 25 °C (VGS = 4.5 V) with pulsed IDM of 40 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 16 | 20 | mΩ | VGS=10V, ID=8A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 18.9 | 24 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Forward Transconductance | gFS | 33 | S | VDS=5V,ID=8A | 2 | ||
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS=0V,IS=9A | 2 | |
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Drain Current | ID@TA=25℃ | 12 | A | VGS @ 4.5V, TA=25℃ | 1 | ||
| Drain Current | ID@TA=70℃ | 7 | A | VGS @ 4.5V, TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 2.9 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 65 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
HXY4884S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hxy4884s-etched.step/hxy4884s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hxy4884s.step/hxy4884s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
810c84a1d30569d1, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HXY4884S
**HXY MOSFET** · MOSFETs · SOP-8
HXY4884S from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of N-channel MOSFET 1; the device absolute maximum ratings are VDS 40 V and VGS ±20 V. |
| 2 | G1 | input | Gate of N-channel MOSFET 1; VGS is rated at ±20 V maximum, and RDS(on) is specified at VGS = 4.5 V and 10 V. |
| 3 | S2 | passive | Source terminal of N-channel MOSFET 2; the device absolute maximum ratings are VDS 40 V and VGS ±20 V. |
| 4 | G2 | input | Gate of N-channel MOSFET 2; VGS is rated at ±20 V maximum, and RDS(on) is specified at VGS = 4.5 V and 10 V. |
| 5 | D2 | passive | Drain terminal of N-channel MOSFET 2; continuous drain current ID is 12 A at TA = 25 °C (VGS = 4.5 V) with pulsed IDM of 40 A. |
| 6 | D2 | passive | Drain terminal of N-channel MOSFET 2 (second drain pin, internally tied to pin 5); continuous drain current ID is 12 A at TA = 25 °C (VGS = 4.5 V) with pulsed IDM of 40 A. |
| 7 | D1 | passive | Drain terminal of N-channel MOSFET 1; continuous drain current ID is 12 A at TA = 25 °C (VGS = 4.5 V) with pulsed IDM of 40 A. |
| 8 | D1 | passive | Drain terminal of N-channel MOSFET 1 (second drain pin, internally tied to pin 7); continuous drain current ID is 12 A at TA = 25 °C (VGS = 4.5 V) with pulsed IDM of 40 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 | | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=40V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 16 | 20 | mΩ | VGS=10V, ID=8A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 18.9 | 24 | mΩ | VGS=4.5V, ID=4A | 2 |
| Forward Transconductance | gFS | 33 | | | S | VDS=5V,ID=8A | 2 |
| Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | VGS=0V,IS=9A | 2 |
| Drain-Source Voltage | VDS | | | 40 | V | | 1 |
| Gate-Source Voltage | VGS | | | 20 | V | | 1 |
| Drain Current | ID@TA=25℃ | | | 12 | A | VGS @ 4.5V, TA=25℃ | 1 |
| Drain Current | ID@TA=70℃ | | | 7 | A | VGS @ 4.5V, TA=70℃ | 1 |
| Pulsed Drain Current | IDM | | | 40 | A | | 1 |
| Total Power Dissipation | PD@TA=25℃ | | | 2.9 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | | | 65 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `HXY4884S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `hxy4884s-etched.step` / `hxy4884s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hxy4884s.step` / `hxy4884s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757975335659024384) (6 pp, sha256 `810c84a1d30569d1`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hxy4884s-datasheet.pdf)