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HXY4882S

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HXY4882S

HXY MOSFET · MOSFETs · SOP-8

HXY4882S from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of the first N-channel MOSFET; continuous source current is rated 8 A and pulsed source current 36 A.
2 G1 input Gate of the first N-channel MOSFET; gate-source voltage absolute maximum rating is ±20 V.
3 S2 passive Source terminal of the second N-channel MOSFET; continuous source current is rated 8 A and pulsed source current 36 A.
4 G2 input Gate of the second N-channel MOSFET; gate-source voltage absolute maximum rating is ±20 V.
5 D2 passive Drain terminal of the second N-channel MOSFET; drain-source voltage is rated 40 V and drain current 8 A at TA=25°C.
6 D2 passive Drain terminal of the second N-channel MOSFET (internally tied to pin 5); drain-source voltage is rated 40 V and drain current 8 A at TA=25°C.
7 D1 passive Drain terminal of the first N-channel MOSFET; drain-source voltage is rated 40 V and drain current 8 A at TA=25°C.
8 D1 passive Drain terminal of the first N-channel MOSFET (internally tied to pin 7); drain-source voltage is rated 40 V and drain current 8 A at TA=25°C.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current ID 8 A TA=25℃, VGS @ 4.5V 1
Drain Current ID 6 A TA=70℃, VGS @ 4.5V 1
Pulsed Drain Current IDM 36 A 1
Total Power Dissipation PD 1.9 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 40 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 16 20 mΩ VGS=10V, ID=7A 2
Static Drain-Source On-Resistance RDS(ON) 20 26 mΩ VGS=4.5V, ID=6A 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=32V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=32V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 8 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 36 A 2
Diode Forward Voltage VSD 1 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HXY4882S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hxy4882s-etched.step / hxy4882s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hxy4882s.step / hxy4882s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 7695020da029cfe2, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF