component
HXY4480S
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HXY4480S
HXY MOSFET · MOSFETs · SOP-8
HXY4480S from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; 40V VDS device, source pins 1-3 are tied together. |
| 2 | S | passive | Source of the N-channel MOSFET; tied to the common source with pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET; tied to the common source with pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET; absolute maximum VGS is ±20V and it is specified for drive as low as 4.5V. |
| 5 | D | passive | Drain of the N-channel MOSFET; drain pins 5-8 are tied together, VDS max 40V, continuous ID 14A. |
| 6 | D | passive | Drain of the N-channel MOSFET; tied to the common drain with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET; tied to the common drain with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET; tied to the common drain with pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Drain Current-Continuous | ID | 14 | A | TC=25℃ | 1 | ||
| Drain Current-Continuous (70℃) | ID (70 ℃) | 10 | A | TC=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 70 | A | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 3.1 | W | TC=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 135 | mJ | Note 5 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | VDSS | 40 | V | ID=250μA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=32V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=55℃) | IDSS | 5 | uA | VDS=32V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | uA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS=VGS, ID=250uA | 2 | |
| Static Drain-Source On-Resistance (10V) | RDS(on) | 18 | mΩ | VGS=10V, ID=14A | 2 | ||
| Static Drain-Source On-Resistance (4.5V) | RDS(on) | 24 | mΩ | VGS=4.5V, ID=5A | 2 | ||
| On State Drain Current | ID(ON) | 70 | A | VGS=10V, VDS=5V | 2 | ||
| Forward Transconductance | gFS | 50 | S | VDS=5V, ID=5A | 2 | ||
| Input Capacitance | Ciss | 1600 | 1920 | pF | VGS=0V, VDS=20V, f=1MHz | 2 | |
| Output Capacitance | Coss | 320 | pF | VGS=0V, VDS=20V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 100 | pF | VGS=0V, VDS=20V, f=1MHz | 2 | ||
| Gate Resistance | Rg | 3.4 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Total Gate Charge (10V) | Qg | 22 | nC | VGS=10V, VDS=20V, ID=14A | 2 | ||
| Total Gate Charge (4.5V) | Qg | 10.5 | nC | VGS=10V, VDS=20V, ID=14A | 2 | ||
| Gate Source Charge | Qgs | 4.2 | nC | VGS=10V, VDS=20V, ID=14A | 2 | ||
| Gate Drain Charge | Qgd | 4.8 | nC | VGS=10V, VDS=20V, ID=14A | 2 | ||
| Turn-On Delay Time | td(on) | 3.5 | ns | VGS=10V, VDS=20V, RL=1.5Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 6 | ns | VGS=10V, VDS=20V, RL=1.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 13.2 | ns | VGS=10V, VDS=20V, RL=1.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 3.5 | ns | VGS=10V, VDS=20V, RL=1.5Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 31 | ns | IF=14A, dI/dt=100A/us | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 33 | nC | IF=14A, dI/dt=100A/us | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 4 | A | 2 | |||
| Diode Forward Voltage | VSD | 1 | V | IS=1A, VGS=0V | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 75 | °C/W | Figure 11 annotation | 4 |
CAD (KiCad official)
- Symbol:
HXY4480S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hxy4480s-etched.step/hxy4480s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hxy4480s.step/hxy4480s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
651463846d667c27, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HXY4480S
**HXY MOSFET** · MOSFETs · SOP-8
HXY4480S from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; 40V VDS device, source pins 1-3 are tied together. |
| 2 | S | passive | Source of the N-channel MOSFET; tied to the common source with pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET; tied to the common source with pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET; absolute maximum VGS is ±20V and it is specified for drive as low as 4.5V. |
| 5 | D | passive | Drain of the N-channel MOSFET; drain pins 5-8 are tied together, VDS max 40V, continuous ID 14A. |
| 6 | D | passive | Drain of the N-channel MOSFET; tied to the common drain with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET; tied to the common drain with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET; tied to the common drain with pins 5, 6 and 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 40 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC=25℃ | 1 |
| Drain Current-Continuous | ID | | | 14 | A | TC=25℃ | 1 |
| Drain Current-Continuous (70℃) | ID (70 ℃) | | | 10 | A | TC=70℃ | 1 |
| Pulsed Drain Current | IDM | | | 70 | A | TC=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 3.1 | W | TC=25℃ | 1 |
| Single pulse avalanche energy | EAS | | | 135 | mJ | Note 5 | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | VDSS | 40 | | | V | ID=250μA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS=32V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (TJ=55℃) | IDSS | | | 5 | uA | VDS=32V, VGS=0V, TJ=55℃ | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | uA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 3 | V | VDS=VGS, ID=250uA | 2 |
| Static Drain-Source On-Resistance (10V) | RDS(on) | | | 18 | mΩ | VGS=10V, ID=14A | 2 |
| Static Drain-Source On-Resistance (4.5V) | RDS(on) | | | 24 | mΩ | VGS=4.5V, ID=5A | 2 |
| On State Drain Current | ID(ON) | 70 | | | A | VGS=10V, VDS=5V | 2 |
| Forward Transconductance | gFS | | 50 | | S | VDS=5V, ID=5A | 2 |
| Input Capacitance | Ciss | | 1600 | 1920 | pF | VGS=0V, VDS=20V, f=1MHz | 2 |
| Output Capacitance | Coss | | 320 | | pF | VGS=0V, VDS=20V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 100 | | pF | VGS=0V, VDS=20V, f=1MHz | 2 |
| Gate Resistance | Rg | | 3.4 | | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg | | 22 | | nC | VGS=10V, VDS=20V, ID=14A | 2 |
| Total Gate Charge (4.5V) | Qg | | 10.5 | | nC | VGS=10V, VDS=20V, ID=14A | 2 |
| Gate Source Charge | Qgs | | 4.2 | | nC | VGS=10V, VDS=20V, ID=14A | 2 |
| Gate Drain Charge | Qgd | | 4.8 | | nC | VGS=10V, VDS=20V, ID=14A | 2 |
| Turn-On Delay Time | td(on) | | 3.5 | | ns | VGS=10V, VDS=20V, RL=1.5Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr | | 6 | | ns | VGS=10V, VDS=20V, RL=1.5Ω, RGEN=3Ω | 2 |
| Turn-Off Delay Time | td(off) | | 13.2 | | ns | VGS=10V, VDS=20V, RL=1.5Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf | | 3.5 | | ns | VGS=10V, VDS=20V, RL=1.5Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Time | trr | | 31 | | ns | IF=14A, dI/dt=100A/us | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 33 | | nC | IF=14A, dI/dt=100A/us | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 4 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1 | V | IS=1A, VGS=0V | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA | | 75 | | °C/W | Figure 11 annotation | 4 |
## CAD (KiCad official)
- Symbol: `HXY4480S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `hxy4480s-etched.step` / `hxy4480s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hxy4480s.step` / `hxy4480s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/hxy4480s-datasheet.pdf) (6 pp, sha256 `651463846d667c27`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hxy4480s-datasheet.pdf)