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HXY3N10AI

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HXY3N10AI

HXY MOSFET · MOSFETs · SOT-23

HXY3N10AI from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control terminal of the N-channel MOSFET, with VGS rated ±20 V (absolute maximum) and threshold VGS(th) of 1.0 to 2.5 V.
2 D passive Drain terminal of the N-channel MOSFET, rated for VDS of 100 V with continuous drain current ID of 3 A at TA=25℃ (VGS=10V).
3 S passive Source terminal of the N-channel MOSFET, with continuous source current IS limited to 1.2 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TA=25℃ 3 A VGS @ 10V 1
Continuous Drain Current ID@TA=70℃ 1 A VGS @ 10V 1
Pulsed Drain Current IDM 5 A 1
Total Power Dissipation PD@TA=25℃ 1 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 125 ℃/W 1
Thermal Resistance Junction-Case RθJC 80 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 210 248 mΩ VGS=10V, ID=1A 2
Static Drain-Source On-Resistance RDS(ON) 244 290 mΩ VGS=4.5V, ID=0.5A 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=80V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=80V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 2.8 5.6 VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (10V) Qg 9.7 13.6 nC VDS=80V, VGS=10V, ID=1A 2
Gate-Source Charge Qgs 1.6 2.2 nC VDS=80V, VGS=10V, ID=1A 2
Gate-Drain Charge Qgd 1.7 2.4 nC VDS=80V, VGS=10V, ID=1A 2
Turn-On Delay Time Td(on) 1.6 3.2 ns VDD=50V, VGS=10V, RG=3.3Ω, ID=1A 2
Rise Time Tr 19 34 ns VDD=50V, VGS=10V, RG=3.3Ω, ID=1A 2
Turn-Off Delay Time Td(off) 13.6 27 ns VDD=50V, VGS=10V, RG=3.3Ω, ID=1A 2
Fall Time Tf 19 38 ns VDD=50V, VGS=10V, RG=3.3Ω, ID=1A 2
Input Capacitance Ciss 508 711 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 29 41 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 16.4 23 pF VDS=15V, VGS=0V, f=1MHz 2
Continuous Source Current IS 1.2 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 5 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HXY3N10AI
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hxy3n10ai-etched.step / hxy3n10ai-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hxy3n10ai.step / hxy3n10ai.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 485a3ad5221fccdc, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF