component

HXY3415MI

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorshxy3415mifactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 14d ago
viewers hxy3415mi: viewers · Ray 14d ago
hxy3415mi-etched.glb Publish 0.1.0 · Ray 14d ago
hxy3415mi-etched.step hxy3415mi: factory component page (tier=lcsc) · Ray 14d ago
hxy3415mi-hero.glb hxy3415mi: hero GLB from the etched model (keeps the MPN mark) · Ray 14d ago
hxy3415mi-hero.overlay.json Publish 0.1.0 · Ray 14d ago
hxy3415mi.glb Publish 0.1.0 · Ray 14d ago
hxy3415mi.kicad_mod Publish 0.1.0 · Ray 14d ago
hxy3415mi.kicad_sym Publish 0.1.0 · Ray 14d ago
hxy3415mi.lbr Publish 0.1.0 · Ray 14d ago
hxy3415mi.step Publish 0.1.0 · Ray 14d ago
package.json Publish 0.1.0 · Ray 14d ago
page.json Set visibility: public · Ray 14d ago
README.md Publish 0.1.0 · Ray 14d ago

HXY3415MI

HXY MOSFET · MOSFETs · SOT-23-3L

HXY3415MI from HXY MOSFET, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±10V, with RDS(ON) < 45mΩ at VGS=-4.5V and a threshold of -0.35V to -0.9V at ID=-250μA.
2 S passive Source of the P-channel MOSFET; continuous drain current is -4.1A and maximum power dissipation is 1.4W.
3 D passive Drain; drain-source voltage rating is -20V, continuous current -4.1A and pulsed current -30A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Zero Gate Voltage Drain Current IDSS 1 μA VDS=-20V,VGS=0V 2
Gate-Body Leakage Current IGSS -10 10 μA VGS=±10V,VDS=0V 2
Gate Threshold Voltage VGS(th) -0.35 -0.55 -0.9 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 34 45 mΩ VGS=-4.5V, ID=-4A 2
Drain-Source On-State Resistance RDS(ON) 44 60 mΩ VGS=-2.5V, ID=-4A 2
Forward Transconductance gFS 8 S VDS=-5V,ID=-4A 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=-4A 2
Diode Forward Current IS -4 A 2
Drain-Source Voltage VDS -20 V TA=25℃ unless otherwise noted 1
Gate-Source Voltage VGS -10 10 V TA=25℃ unless otherwise noted 1
Drain Current-Continuous ID -4.1 A TA=25℃ unless otherwise noted 1
Drain Current-Pulsed IDM -30 A Note 1; TA=25℃ unless otherwise noted 1
Maximum Power Dissipation PD 1.4 W TA=25℃ unless otherwise noted 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 89.3 ℃/W Note 2 1

CAD (KiCad official)

  • Symbol: HXY3415MI
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: hxy3415mi-etched.step / hxy3415mi-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hxy3415mi.step / hxy3415mi.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 7a2b4dfb0f818f67, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF