component

HXY30N10D

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorhxy30n10dfactory-2.0.0extractor-text

Verified HXY30N10D

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HXY30N10D · TO-252-2L · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-wkhog936/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.5)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ hxy30n10d.kicad_sym✓ hxy30n10d.kicad_mod✓ hxy30n10d.step
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3D Model

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Symbol & Footprint

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PCB Footprint

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Datasheet

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Contents

README

markdown

HXY30N10D

HXY MOSFET · MOSFETs · TO-252-2L

HXY30N10D from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated ±20 V per the absolute maximum ratings.
2 D passive Drain terminal; rated 100 V drain-source voltage and 30 A continuous drain current at TC=25℃.
3 S passive Source terminal; reference for the gate-source voltage rated ±20 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 35 43 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 40 50 mΩ VGS=4.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 1.3 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 10 uA VDS=80V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 100 uA VDS=80V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 1.6 3.2 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (10V) Qg 60 84 nC VDS=80V, VGS=10V, ID=20A 2
Gate-Source Charge Qgs 9.7 14 nC VDS=80V, VGS=10V, ID=20A 2
Gate-Drain Charge Qgd 11.8 16.5 nC VDS=80V, VGS=10V, ID=20A 2
Turn-On Delay Time Td(on) 10.4 21 ns VDD=50V, VGS=10V, RG=3.3, ID=20A 2
Rise Time Tr 46 83 ns VDD=50V, VGS=10V, RG=3.3, ID=20A 2
Turn-Off Delay Time Td(off) 54 108 ns VDD=50V, VGS=10V, RG=3.3, ID=20A 2
Fall Time Tf 10 20 ns VDD=50V, VGS=10V, RG=3.3, ID=20A 2
Input Capacitance Ciss 3848 5387 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 137 192 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 82 115 pF VDS=15V, VGS=0V, f=1MHz 2
Continuous Source Current IS 22 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 45 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 30 A VGS @ 10V, TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 13.5 A VGS @ 10V, TC=100℃ 1
Continuous Drain Current ID@TA=25℃ 4.2 A VGS @ 10V, TA=25℃ 1
Continuous Drain Current ID@TA=70℃ 3.4 A VGS @ 10V, TA=70℃ 1
Pulsed Drain Current IDM 45 A 1
Single Pulse Avalanche Energy EAS 36.5 mJ 1
Avalanche Current IAS 27 A 1
Total Power Dissipation PD@TC=25℃ 52.1 W TC=25℃ 1
Total Power Dissipation PD@TA=25℃ 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Surface mounted on 1 inch² FR-4 board with 2OZ copper 1
Thermal Resistance Junction-Case RθJC 2.4 ℃/W 1

CAD (KiCad official)

  • Symbol: HXY30N10D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hxy30n10d-etched.step / hxy30n10d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hxy30n10d.step / hxy30n10d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 c8ef37368425e03e, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF