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HXY2310AI

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HXY2310AI

HXY MOSFET · MOSFETs · SOT-23

HXY2310AI from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the MOSFET; the datasheet limits the gate-source voltage to ±20 V (VGS).
2 D passive Drain terminal; the datasheet rates drain-source voltage at 60 V (VDS) and continuous drain current at 3 A (ID).
3 S passive Source terminal; the datasheet rates the body diode forward current at 3 A (IS) and gives the source as the reference for VGS.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 3 A 1
Drain Current-Pulsed IDM 10 A Note 1: Repetitive rating, pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 1.7 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 73.5 ℃/W Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec 1
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 0.8 1.3 2 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance (VGS=10V) RDS(ON) 85 mΩ VGS=10V, ID=3A 1
Forward Transconductance gFS 3 S VDS=15V,ID=2A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=3A 2
Diode Forward Current IS 3 A 2

CAD (KiCad official)

  • Symbol: HXY2310AI
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hxy2310ai-etched.step / hxy2310ai-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hxy2310ai.step / hxy2310ai.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 437f04af85bd863c, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF