component
HXY2102EI
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HXY MOSFET MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HXY2102EI
HXY MOSFET · MOSFETs · SOT-323
HXY2102EI from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±12 V (VGS) in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 20 V (VDS) with 2 A continuous drain current (ID). |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the maximum continuous body-diode forward current is 1.0 A (IS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
HXY2102EI - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
hxy2102ei-etched.step/hxy2102ei-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hxy2102ei.step/hxy2102ei.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
ff47a8714e50f4b9, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HXY2102EI
**HXY MOSFET** · MOSFETs · SOT-323
HXY2102EI from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±12 V (VGS) in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 20 V (VDS) with 2 A continuous drain current (ID). |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the maximum continuous body-diode forward current is 1.0 A (IS). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `HXY2102EI`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `hxy2102ei-etched.step` / `hxy2102ei-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hxy2102ei.step` / `hxy2102ei.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758135264231198720) (4 pp, sha256 `ff47a8714e50f4b9`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hxy2102ei-datasheet.pdf)