# HXY100N03D

**HXY MOSFET** · MOSFETs · TO-252-2L

HXY100N03D from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±20 V (VGS), and RDS(ON) is specified at VGS = 4.5 V and 10 V. |
| 2 | D | passive | Drain terminal; drain-source voltage is rated 30 V (VDS) with continuous drain current of 100 A at TC = 25℃ (VGS @ 10V). |
| 3 | S | passive | Source terminal; continuous source current is rated 80 A (IS) and pulsed source current 160 A (ISM). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 100 | A | TC=25℃, VGS @ 10V | 1 |
| Continuous Drain Current | ID |  |  | 57 | A | TC=100℃, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 160 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 115.2 | mJ |  | 1 |
| Avalanche Current | IAS |  |  | 48 | A |  | 1 |
| Total Power Dissipation | PD |  |  | 53 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 175 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 62 | ℃/W | Steady State | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 25 | ℃/W | t ≤10s | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 2.8 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 3.8 | 5.5 | mΩ | VGS=10V, ID=30A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 7.5 | 9 | mΩ | VGS=4.5V, ID=15A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Resistance | Rg |  | 1.7 | 3.4 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Continuous Source Current | IS |  |  | 80 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | 160 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `HXY100N03D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `hxy100n03d-etched.step` / `hxy100n03d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hxy100n03d.step` / `hxy100n03d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757974718312271872) (6 pp, sha256 `79256bc93b015ba0`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hxy100n03d-datasheet.pdf)