component
HX8205
Public Made by Adomby adom
HX hengjiaxing MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HX8205
HX hengjiaxing · MOSFETs · SOT-23-6L
HX8205 from HX hengjiaxing, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; VDS rated 20V and continuous drain current 4.0A at TA=25°C. |
| 2 | D1/D2 | passive | Common drain connection of MOSFET 1 and MOSFET 2 (tied to pin 5); VDS rated 20V. |
| 3 | S2 | passive | Source of MOSFET 2; VDS rated 20V and continuous drain current 4.0A at TA=25°C. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±12V with threshold 0.45V to 1.2V at 250µA. |
| 5 | D1/D2 | passive | Common drain connection of MOSFET 1 and MOSFET 2 (tied to pin 2); VDS rated 20V. |
| 6 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±12V with threshold 0.45V to 1.2V at 250µA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HX hengjiaxing |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 20 | V | VGS=0V, ID=250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=20V, VGS=0V | 2 | ||
| Gate-body leakage | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Gate threshold voltage | VGS(th) | 0.45 | 0.65 | 1.2 | V | VDS=VGS, ID=250µA | 2 |
| Drain-source on-state resistance | RDS(ON) | 22 | 26 | mΩ | VGS=4.5V, ID=4.0A | 2 | |
| Drain-source on-state resistance | RDS(ON) | 28 | 35 | mΩ | VGS=2.5V, ID=3.0A | 2 | |
| Diode forward voltage | VSD | 0.76 | 1.16 | V | VGS=0V, Is=2A | 2 | |
| Drain-source voltage | VDS | 20 | V | 1 | |||
| Gate-source voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous drain current | ID | 4 | A | TJ = 150 °C, TA = 25 °C | 1 | ||
| Continuous drain current | ID | 3 | A | TA = 70 °C | 1 | ||
| Pulsed drain current | IDM | 20 | A | 1 | |||
| Continuous source current (diode conduction) | IS | 1.2 | A | 1 | |||
| Power dissipation | PD | 1.4 | W | TA = 25°C | 1 | ||
| Power dissipation | PD | 0.9 | W | TA = 70°C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum junction-to-ambient | RθJA | 70 | 90 | ℃/W | ≤ 10 s | 2 | |
| Maximum junction-to-ambient | RθJA | 100 | 125 | ℃/W | Steady-State | 2 | |
| Maximum junction-to-foot | RθJC | 63 | 80 | ℃/W | Steady-State | 2 |
CAD (KiCad official)
- Symbol:
HX8205 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
hx8205-etched.step/hx8205-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hx8205.step/hx8205.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HX hengjiaxing datasheet (3 pp, sha256
4426c78f046cb78d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HX8205
**HX hengjiaxing** · MOSFETs · SOT-23-6L
HX8205 from HX hengjiaxing, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; VDS rated 20V and continuous drain current 4.0A at TA=25°C. |
| 2 | D1/D2 | passive | Common drain connection of MOSFET 1 and MOSFET 2 (tied to pin 5); VDS rated 20V. |
| 3 | S2 | passive | Source of MOSFET 2; VDS rated 20V and continuous drain current 4.0A at TA=25°C. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±12V with threshold 0.45V to 1.2V at 250µA. |
| 5 | D1/D2 | passive | Common drain connection of MOSFET 1 and MOSFET 2 (tied to pin 2); VDS rated 20V. |
| 6 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±12V with threshold 0.45V to 1.2V at 250µA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HX hengjiaxing |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 20 | | | V | VGS=0V, ID=250µA | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS=20V, VGS=0V | 2 |
| Gate-body leakage | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±12V | 2 |
| Gate threshold voltage | VGS(th) | 0.45 | 0.65 | 1.2 | V | VDS=VGS, ID=250µA | 2 |
| Drain-source on-state resistance | RDS(ON) | | 22 | 26 | mΩ | VGS=4.5V, ID=4.0A | 2 |
| Drain-source on-state resistance | RDS(ON) | | 28 | 35 | mΩ | VGS=2.5V, ID=3.0A | 2 |
| Diode forward voltage | VSD | | 0.76 | 1.16 | V | VGS=0V, Is=2A | 2 |
| Drain-source voltage | VDS | | | 20 | V | | 1 |
| Gate-source voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous drain current | ID | | | 4 | A | TJ = 150 °C, TA = 25 °C | 1 |
| Continuous drain current | ID | | | 3 | A | TA = 70 °C | 1 |
| Pulsed drain current | IDM | | | 20 | A | | 1 |
| Continuous source current (diode conduction) | IS | | | 1.2 | A | | 1 |
| Power dissipation | PD | | | 1.4 | W | TA = 25°C | 1 |
| Power dissipation | PD | | | 0.9 | W | TA = 70°C | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 | | 150 | ℃ | | 1 |
| Maximum junction-to-ambient | RθJA | | 70 | 90 | ℃/W | ≤ 10 s | 2 |
| Maximum junction-to-ambient | RθJA | | 100 | 125 | ℃/W | Steady-State | 2 |
| Maximum junction-to-foot | RθJC | | 63 | 80 | ℃/W | Steady-State | 2 |
## CAD (KiCad official)
- Symbol: `HX8205`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `hx8205-etched.step` / `hx8205-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hx8205.step` / `hx8205.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HX hengjiaxing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590910172003463168) (3 pp, sha256 `4426c78f046cb78d`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hx8205-datasheet.pdf)