component
HX2302S
Public Made by Adomby adom
HX hengjiaxing MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
HX2302S
HX hengjiaxing · MOSFETs · SOT-23
HX2302S from HX hengjiaxing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±12 V, with threshold VGS(th) of 0.5 V min to 1.2 V max at ID=250µA. |
| 2 | S | passive | Source; continuous diode forward current limit is 2 A. |
| 3 | D | passive | Drain; drain-source voltage is 20 V max, continuous drain current 2 A and pulsed drain current 8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HX hengjiaxing |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 20 | V | VGS=0V, ID=250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=20V, VGS=0V | 2 | ||
| Gate-body leakage | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Gate threshold voltage | VGS(th) | 0.5 | 0.75 | 1.2 | V | VDS=VGS, ID=250µA | 2 |
| Drain-source on-state resistance | RDS(ON) | 50 | 65 | mΩ | VGS=4.5V, ID=2A | 2 | |
| Drain-source on-state resistance | RDS(ON) | 68 | 88 | mΩ | VGS=2.5V, ID=1A | 2 | |
| Diode forward voltage | VSD | 0.76 | 1.16 | V | VGS=0V, Is=3A | 2 | |
| Drain-source voltage | VDS | 20 | V | 1 | |||
| Gate-source voltage | VGS | -12 | 12 | V | 1 | ||
| Drain current-continuous | ID | 2 | A | Tj=125℃ | 1 | ||
| Pulsed drain current | IDM | 8 | A | 1 | |||
| Drain-source diode forward current | Is | 2 | A | 1 | |||
| Maximum power dissipation | PD | 1.25 | W | 1 | |||
| Operating junction temperature range | Tj | -55 | 150 | ℃ | 1 | ||
| Thermal resistance junction-to-ambient | RθJA | 100 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
HX2302S - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
hx2302s-etched.step/hx2302s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hx2302s.step/hx2302s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HX hengjiaxing datasheet (5 pp, sha256
cb3959549dc0f934, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HX2302S
**HX hengjiaxing** · MOSFETs · SOT-23
HX2302S from HX hengjiaxing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±12 V, with threshold VGS(th) of 0.5 V min to 1.2 V max at ID=250µA. |
| 2 | S | passive | Source; continuous diode forward current limit is 2 A. |
| 3 | D | passive | Drain; drain-source voltage is 20 V max, continuous drain current 2 A and pulsed drain current 8 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HX hengjiaxing |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 20 | | | V | VGS=0V, ID=250µA | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS=20V, VGS=0V | 2 |
| Gate-body leakage | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±12V | 2 |
| Gate threshold voltage | VGS(th) | 0.5 | 0.75 | 1.2 | V | VDS=VGS, ID=250µA | 2 |
| Drain-source on-state resistance | RDS(ON) | | 50 | 65 | mΩ | VGS=4.5V, ID=2A | 2 |
| Drain-source on-state resistance | RDS(ON) | | 68 | 88 | mΩ | VGS=2.5V, ID=1A | 2 |
| Diode forward voltage | VSD | | 0.76 | 1.16 | V | VGS=0V, Is=3A | 2 |
| Drain-source voltage | VDS | | | 20 | V | | 1 |
| Gate-source voltage | VGS | -12 | | 12 | V | | 1 |
| Drain current-continuous | ID | | | 2 | A | Tj=125℃ | 1 |
| Pulsed drain current | IDM | | | 8 | A | | 1 |
| Drain-source diode forward current | Is | | | 2 | A | | 1 |
| Maximum power dissipation | PD | | | 1.25 | W | | 1 |
| Operating junction temperature range | Tj | -55 | | 150 | ℃ | | 1 |
| Thermal resistance junction-to-ambient | RθJA | | 100 | | ℃/W | | 2 |
## CAD (KiCad official)
- Symbol: `HX2302S`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `hx2302s-etched.step` / `hx2302s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hx2302s.step` / `hx2302s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HX hengjiaxing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590237074240024576) (5 pp, sha256 `cb3959549dc0f934`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hx2302s-datasheet.pdf)