component
HX2301S
Public Made by Adomby adom
HX hengjiaxing MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| hx2301s-etched.glb | 17d ago |
| hx2301s-etched.step | 17d ago |
| hx2301s-hero.glb | 17d ago |
| hx2301s-hero.overlay.json | 17d ago |
| hx2301s.glb | 17d ago |
| hx2301s.kicad_mod | 17d ago |
| hx2301s.kicad_sym | 17d ago |
| hx2301s.lbr | 17d ago |
| hx2301s.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
HX2301S
HX hengjiaxing · MOSFETs · SOT-23
HX2301S from HX hengjiaxing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for a gate-source voltage VGS of ±12 V, and the datasheet states operation with gate voltages as low as 1.8 V. |
| 2 | S | passive | Source of the P-channel MOSFET; the source-drain diode forward current Is is rated at -1.25 A. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated for a drain-source voltage VDS of -20 V and continuous drain current ID of -2.3 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HX hengjiaxing |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -20 | V | TA=25℃ | 1 | ||
| Gate-source voltage | VGS | -12 | 12 | V | TA=25℃ | 1 | |
| Drain current-continuous | ID | -2.3 | A | Tj=125℃ | 1 | ||
| Pulsed drain current | IDM | -7.6 | A | 1 | |||
| Drain-source diode forward current | Is | -1.25 | A | 1 | |||
| Maximum power dissipation | PD | 1 | W | TA=25℃ | 1 | ||
| Operating junction temperature range | Tj | -55 | 150 | ℃ | 1 | ||
| Drain-source breakdown voltage | BVDSS | -20 | V | VGS=0V, ID=-250µA | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | µA | VDS=-20V, VGS=0V | 2 | ||
| Gate-body leakage | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Gate threshold voltage | VGS(th) | -0.5 | -0.7 | -1.2 | V | VDS=VGS, ID=-250µA | 2 |
| Drain-source on-state resistance | RDS(ON) | 112 | 140 | mΩ | VGS=-4.5V, ID=-1.8A | 2 | |
| Drain-source on-state resistance | RDS(ON) | 140 | 165 | mΩ | VGS=-2.5V, ID=-1A | 2 | |
| Diode forward voltage | VSD | -0.81 | -1.2 | V | VGS=0V, Is=-1.25A | 2 | |
| Thermal resistance junction-to-ambient | Rth JA | 100 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
HX2301S - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
hx2301s-etched.step/hx2301s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hx2301s.step/hx2301s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HX hengjiaxing datasheet (5 pp, sha256
81bccff80c98cbf0, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).