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HX2301A

Public Made by Adom

by adom

HX hengjiaxing MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 22d ago
viewers hx2301a: viewers · Ray 22d ago
hx2301a-etched.glb hx2301a: factory component page (tier=lcsc) · Ray 22d ago
hx2301a-etched.step hx2301a: factory component page (tier=lcsc) · Ray 22d ago
hx2301a-hero.glb hx2301a: hero GLB from the etched model (keeps the MPN mark) · Ray 22d ago
hx2301a-hero.overlay.json Publish 0.1.0 · Ray 22d ago
hx2301a.glb Publish 0.1.0 · Ray 22d ago
hx2301a.kicad_mod Publish 0.1.0 · Ray 22d ago
hx2301a.kicad_sym Publish 0.1.0 · Ray 22d ago
hx2301a.lbr Publish 0.1.0 · Ray 22d ago
hx2301a.step Publish 0.1.0 · Ray 22d ago
package.json Publish 0.1.0 · Ray 22d ago
page.json hx2301a: specified limits as data (metadata.characteristics, 16 rows from the datasheet) · Ray 16d ago
README.md hx2301a: specified limits as data (metadata.characteristics, 16 rows from the datasheet) · Ray 16d ago

HX2301A

HX hengjiaxing · MOSFETs · SOT-23

HX2301A from HX hengjiaxing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage is rated ±12 V per the absolute maximum ratings.
2 S passive Source of the P-channel MOSFET; the source-drain diode forward current Is is rated -1.25 A.
3 D passive Drain of the P-channel MOSFET; continuous drain current ID is rated -2.3 A (at Tj=125℃) with VDS of -20 V.

Key specifications

Parameter Value
Manufacturer HX hengjiaxing
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -20 V 1
Gate-source voltage VGS -12 12 V 1
Drain current-continuous ID -2.3 A Tj=125℃ 1
Pulsed drain current IDM -7.6 A pulsed 1
Drain-source diode forward current IS -1.25 A 1
Maximum power dissipation PD 1 W TA=25℃ 1
Operating junction temperature range Tj -55 150 ℃ 1
Storage temperature -55 150 ℃ Ordering information table 1
Drain-source breakdown voltage BVDSS -20 V VGS=0V, ID=-250µA 2
Zero gate voltage drain current IDSS -1 µA VDS=-20V, VGS=0V 2
Gate-body leakage IGSS -100 100 nA VDS=0V, VGS=±12V 2
Gate threshold voltage VGS(th) -0.5 -0.7 -1.2 V VDS=VGS, ID=-250µA 2
Drain-source on-state resistance RDS(ON) 112 140 mΩ VGS=-4.5V, ID=-1.8A 2
Drain-source on-state resistance RDS(ON) 140 165 mΩ VGS=-2.5V, ID=-1A 2
Diode forward voltage VSD -0.81 -1.2 V VGS=0V, Is=-1.25A 2
Thermal resistance junction-to-ambient Rth JA 100 ℃/W 2

CAD (KiCad official)

  • Symbol: HX2301A
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hx2301a-etched.step / hx2301a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hx2301a.step / hx2301a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HX hengjiaxing datasheet (5 pp, sha256 fa06fb3bff0ff3e0, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF