component
HX2301A
Public Made by Adomby adom
HX hengjiaxing MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
hx2301a: specified limits as data (metadata.characteristics, 16 rows from the datasheet)
2 files changed
+223−1
README.md+23@@ -21,6 +21,29 @@ HX2301A from HX hengjiaxing, in a SOT-23. Pinout and pin descriptions extracted | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS | | | -20 | V | | 1 |+| Gate-source voltage | VGS | -12 | | 12 | V | | 1 |+| Drain current-continuous | ID | | | -2.3 | A | Tj=125℃ | 1 |+| Pulsed drain current | IDM | | | -7.6 | A | pulsed | 1 |+| Drain-source diode forward current | IS | | | -1.25 | A | | 1 |+| Maximum power dissipation | PD | | | 1 | W | TA=25℃ | 1 |+| Operating junction temperature range | Tj | -55 | | 150 | ℃ | | 1 |+| Storage temperature | | -55 | | 150 | ℃ | Ordering information table | 1 |+| Drain-source breakdown voltage | BVDSS | -20 | | | V | VGS=0V, ID=-250µA | 2 |+| Zero gate voltage drain current | IDSS | | | -1 | µA | VDS=-20V, VGS=0V | 2 |+| Gate-body leakage | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±12V | 2 |+| Gate threshold voltage | VGS(th) | -0.5 | -0.7 | -1.2 | V | VDS=VGS, ID=-250µA | 2 |+| Drain-source on-state resistance | RDS(ON) | | 112 | 140 | mΩ | VGS=-4.5V, ID=-1.8A | 2 |+| Drain-source on-state resistance | RDS(ON) | | 140 | 165 | mΩ | VGS=-2.5V, ID=-1A | 2 |+| Diode forward voltage | VSD | | -0.81 | -1.2 | V | VGS=0V, Is=-1.25A | 2 |+| Thermal resistance junction-to-ambient | Rth JA | | 100 | | ℃/W | | 2 |+ ## CAD (KiCad official) - Symbol: `HX2301A`
page.json+200−1@@ -147,6 +147,205 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "fa06fb3bff0ff3e0",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain current-continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -2.3,+ "conditions": "Tj=125℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -7.6,+ "conditions": "pulsed",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source diode forward current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -1.25,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "Tj",+ "kind": "recommended_operating",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "Ordering information table",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=-250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-20V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0V, VGS=±12V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.5,+ "typ": -0.7,+ "max": -1.2,+ "conditions": "VDS=VGS, ID=-250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 112,+ "max": 140,+ "conditions": "VGS=-4.5V, ID=-1.8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 140,+ "max": 165,+ "conditions": "VGS=-2.5V, ID=-1A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.81,+ "max": -1.2,+ "conditions": "VGS=0V, Is=-1.25A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-to-ambient",+ "symbol": "Rth JA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 100,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +387,4 @@ "visibility": { "public": true }-}+}