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Contents

README

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HVS5V0BL1QST18R

HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HVS5V0BL1QST18R from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive The datasheet shows pin 1 on the DFN1006-2L ordering diagram but gives no pin name or function; it protects one bi-directional I/O line with 5V working voltage (VRWM 5.0 V) and ±8kV contact / ±15kV air ESD protection (IEC 61000-4-2).
2 2 passive The datasheet shows pin 2 on the DFN1006-2L ordering diagram but gives no pin name or function; it protects one bi-directional I/O line with 5V working voltage (VRWM 5.0 V) and ±8kV contact / ±15kV air ESD protection (IEC 61000-4-2).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Breakdown Voltage VBR 6 V IT = 1mA 2
Reverse Working Voltage VRWM 5 V 2
Reverse Leakage Current IR 0.1 μA VRWM = 5.0V 2
Clamping Voltage VC 13 V IPP = 1A, tp = 8/20μs 2
Clamping Voltage VC 25 V IPP = 4A, tp = 8/20μs 2
Junction Capacitance CJ 0.5 pF VR = 0V, f = 1MHz 2
Peak Pulse Power PPP 100 W tp = 8/20 μs 1
Maximum lead temperature for soldering TL 260 °C during 10s 1
Storage Temperature Range Tstg -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
Operating Temperature Range Top -55 150 °C 1
ESD contact discharge (IEC 61000-4-2) -8 8 kV IEC61000-4-2 contact discharge 1
ESD air discharge (IEC 61000-4-2) -15 15 kV IEC61000-4-2 air discharge 1
EFT (IEC 61000-4-4) 40 A IEC61000-4-4, 5/50 ns 1

CAD (KiCad official)

  • Symbol: HVS5V0BL1QST18R
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hvs5v0bl1qst18r-etched.step / hvs5v0bl1qst18r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hvs5v0bl1qst18r.step / hvs5v0bl1qst18r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 2bda35e77b9163f6, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF