component
HVESD12C1-02VHG3-08
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), SOD-523. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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HVESD12C1-02VHG3-08
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · SOD-523
HVESD12C1-02VHG3-08 from HXY MOSFET, in a SOD-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-523 |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power (tp = 8/20 μs) | PPP | 174 | μ W | tp = 8/20 s | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 155 | °C | 1 | ||
| Operating Temperature Range | Top | -40 | 125 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 (ESD) air discharge | -30 | 30 | KV | air discharge | 1 | ||
| IEC61000-4-2 (ESD) contact discharge | -30 | 30 | KV | contact discharge | 1 | ||
| IEC61000-4-4 (EFT) | 40 | A | 1 | ||||
| Reverse Working Voltage | VRWM | 12 | V | 2 | |||
| Reverse Breakdown Voltage | VBR | 14.1 | V | IT = 1mA | 2 | ||
| Reverse Leakage Current | IR | 0.02 | μA | VRWM = 12V | 2 |
CAD (KiCad official)
- Symbol:
HVESD12C1-02VHG3-08 - Footprint:
Diode_SMD:D_SOD-523 - 3D model: SOD-523 (KiCad packages3D, STEP)
- 3D model files:
hvesd12c1-02vhg3-08-etched.step/hvesd12c1-02vhg3-08-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hvesd12c1-02vhg3-08.step/hvesd12c1-02vhg3-08.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
0503d8fa287fd83f, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HVESD12C1-02VHG3-08
**HXY MOSFET** · Electrostatic And Surge Protection (TVS/ESD) · SOD-523
HVESD12C1-02VHG3-08 from HXY MOSFET, in a SOD-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-523 |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power (tp = 8/20 μs) | PPP | | | 174 | μ W | tp = 8/20 s | 1 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10s | 1 |
| Storage Temperature Range | Tstg | -55 | | 155 | °C | | 1 |
| Operating Temperature Range | Top | -40 | | 125 | °C | | 1 |
| Maximum junction temperature | Tj | | | 150 | °C | | 1 |
| IEC61000-4-2 (ESD) air discharge | | -30 | | 30 | KV | air discharge | 1 |
| IEC61000-4-2 (ESD) contact discharge | | -30 | | 30 | KV | contact discharge | 1 |
| IEC61000-4-4 (EFT) | | | | 40 | A | | 1 |
| Reverse Working Voltage | VRWM | | | 12 | V | | 2 |
| Reverse Breakdown Voltage | VBR | 14.1 | | | V | IT = 1mA | 2 |
| Reverse Leakage Current | IR | | | 0.02 | μA | VRWM = 12V | 2 |
## CAD (KiCad official)
- Symbol: `HVESD12C1-02VHG3-08`
- Footprint: `Diode_SMD:D_SOD-523`
- 3D model: SOD-523 (KiCad packages3D, STEP)
- 3D model files: `hvesd12c1-02vhg3-08-etched.step` / `hvesd12c1-02vhg3-08-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hvesd12c1-02vhg3-08.step` / `hvesd12c1-02vhg3-08.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/hvesd12c1-02vhg3-08-datasheet.pdf) (4 pp, sha256 `0503d8fa287fd83f`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hvesd12c1-02vhg3-08-datasheet.pdf)