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HVESD05A1A-HD1-GS08

Public Made by Adom

by adom

HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HVESD05A1A-HD1-GS08

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HVESD05A1A-HD1-GS08 from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive One terminal of the unidirectional ESD protection diode for one data or control line, rated for 5V working voltage and ±15kV IEC 61000-4-2 contact and air ESD; the datasheet does not state whether this pin is the anode or the cathode.
2 2 passive The other terminal of the unidirectional ESD protection diode, rated for 5V working voltage and ±15kV IEC 61000-4-2 contact and air ESD; the datasheet does not state whether this pin is the anode or the cathode.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power PPP 300 W tp = 8/20 µs 1
Maximum lead temperature for soldering TL 260 °C 10 s 1
Storage Temperature Range Tstg -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
Operating Temperature Range Top -55 150 °C 1
ESD immunity, contact discharge -15 15 kV IEC 61000-4-2 contact discharge 1
ESD immunity, air discharge -15 15 kV IEC 61000-4-2 air discharge 1
EFT immunity current 40 A IEC 61000-4-4, 5/50 ns 1
Reverse Breakdown Voltage VBR 6 V IT = 1mA 2
Reverse Leakage Current IR 1 µA VRWM = 5V 2
Clamping Voltage VC 10 V IPP = 5A, tp = 8/20 µs 2
Clamping Voltage VC 25 V IPP = 15A, tp = 8/20 µs 2
Junction Capacitance CJ 40 pF VR = 0V, f = 1MHz 2
Reverse Working Voltage VRWM 5 V Working voltages (Features) 1

CAD (KiCad official)

  • Symbol: HVESD05A1A-HD1-GS08
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hvesd05a1a-hd1-gs08-etched.step / hvesd05a1a-hd1-gs08-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hvesd05a1a-hd1-gs08.step / hvesd05a1a-hd1-gs08.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 30217a038fa291b4, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF