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HVBUS03N1-DD1HG3-08

Public Made by Adom

by adom

HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HVBUS03N1-DD1HG3-08

HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HVBUS03N1-DD1HG3-08 from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive Terminal 1 of the bi-directional ESD protection diode, connected to the protected data/control line (3.3V working voltage, ±8kV contact ESD per IEC 61000-4-2).
2 2 passive Terminal 2 of the bi-directional ESD protection diode, connected to the other side of the protection element (typically ground); the datasheet shows it only as pin 2 in the circuit diagram.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Working Voltage VRWM 3.3 V 2
Reverse Breakdown Voltage VBR 4.2 V IT = 1mA 2
Reverse Leakage Current IR 100 nA VRWM = 3.3V 2
Clamping Voltage VC 12 V IPP = 1A, tp = 8/20μs 2
Clamping Voltage VC 25 V IPP = 4A, tp = 8/20μs 2
Junction Capacitance CJ 0.3 0.45 pF VR = 0V, f = 1MHz 2
Peak Pulse Power PPP 100 W tp = 8/20μs 1
Maximum lead temperature for soldering TL 260 °C during 10s 1
Storage Temperature Range Tstg -55 150 °C 1
Operating Temperature Range Top -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
IEC61000-4-2 ESD air discharge -15 15 kV air discharge 1
IEC61000-4-2 ESD contact discharge -8 8 kV contact discharge 1
IEC61000-4-4 EFT 40 A 5/50 ns 1

CAD (KiCad official)

  • Symbol: HVBUS03N1-DD1HG3-08
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hvbus03n1-dd1hg3-08-etched.step / hvbus03n1-dd1hg3-08-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hvbus03n1-dd1hg3-08.step / hvbus03n1-dd1hg3-08.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 b04f3e554e673a36, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF