component
HUCLAMP3311P.TCT
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 11d ago |
| viewers | 4d ago |
| huclamp3311p-tct-etched.glb | 11d ago |
| huclamp3311p-tct-etched.step | 11d ago |
| huclamp3311p-tct-hero.glb | 11d ago |
| huclamp3311p-tct-hero.overlay.json | 11d ago |
| huclamp3311p-tct.glb | 11d ago |
| huclamp3311p-tct.kicad_mod | 11d ago |
| huclamp3311p-tct.kicad_sym | 4d ago |
| huclamp3311p-tct.lbr | 4d ago |
| huclamp3311p-tct.step | 11d ago |
| package.json | 11d ago |
| page.json | 11d ago |
| README.md | 11d ago |
HUCLAMP3311P.TCT
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
HUCLAMP3311P.TCT from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bidirectional ESD protection diode for a single I/O line, with the device rated for a 3.3 V reverse working voltage (VRWM) and 1.0 µA maximum reverse leakage at VRWM, per the device-level electrical table. |
| 2 | 2 | passive | The other terminal of the bidirectional ESD protection diode for the same protected I/O line, with the device rated for 3.6 V reverse breakdown at 1 mA and 15 pF maximum junction capacitance at 0 V, 1 MHz, per the device-level electrical table. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power | PPP | 84 | W | tp = 8/20 μs | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10 s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| ESD contact discharge (IEC 61000-4-2) | -8 | 8 | kV | IEC 61000-4-2, contact discharge | 1 | ||
| ESD air discharge (IEC 61000-4-2) | -15 | 15 | kV | IEC 61000-4-2, air discharge | 1 | ||
| EFT (IEC 61000-4-4) | 40 | A | 5/50 ns | 1 | |||
| Reverse Breakdown Voltage | VBR | 3.6 | V | IT = 1mA | 2 | ||
| Reverse Leakage Current | IR | 1 | μA | VRWM = 3.3V | 2 | ||
| Clamping Voltage | VC | 8 | V | IPP = 1A, tp = 8/20 μs | 2 | ||
| Clamping Voltage | VC | 12 | V | IPP = 7A, tp = 8/20 μs | 2 | ||
| Junction Capacitance | CJ | 15 | pF | VR = 0V, f = 1MHz | 2 |
CAD (KiCad official)
- Symbol:
HUCLAMP3311P.TCT - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
huclamp3311p-tct-etched.step/huclamp3311p-tct-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);huclamp3311p-tct.step/huclamp3311p-tct.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
c799d19016d9ebad, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).