# HUCLAMP0511P.TNT

**HXY MOSFET** · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HUCLAMP0511P.TNT from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bidirectional ESD/transient protection path for one I/O line, rated for 5 V working voltage and 400 W peak pulse power (8/20 µs). The datasheet does not state which terminal is which. |
| 2 | 2 | passive | The other terminal of the bidirectional ESD/transient protection path for one I/O line, rated for 5 V working voltage and 400 W peak pulse power (8/20 µs). The datasheet does not state which terminal is which. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power (tp = 8/20 µs) | PPP |  |  | 400 | W | tp = 8/20 µs | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum junction temperature | Tj |  |  | 150 | °C |  | 1 |
| Maximum lead temperature for soldering | TL |  |  | 260 | °C | during 10s | 1 |
| IEC61000-4-2 (ESD) contact discharge |  | -30 |  | 30 | kV | IEC61000-4-2 contact discharge | 1 |
| IEC61000-4-2 (ESD) air discharge |  | -30 |  | 30 | kV | IEC61000-4-2 air discharge | 1 |
| IEC61000-4-4 (EFT) surge current |  |  |  | 40 | A | IEC61000-4-4, 5/50 ns | 1 |
| Operating Temperature Range | Top | -55 |  | 150 | °C |  | 1 |
| Reverse Working Voltage | VRWM |  |  | 5 | V |  | 2 |
| Reverse Breakdown Voltage | VBR | 5.8 |  |  | V | IT = 1mA | 2 |
| Reverse Leakage Current | IR |  |  | 1 | µA | VRWM = 5.0V | 2 |
| Clamping Voltage | VC |  | 9 |  | V | IPP = 1A, tp = 8/20µs | 2 |
| Clamping Voltage | VC |  | 9.8 |  | V | IPP = 20A, tp = 8/20µs | 2 |
| Junction Capacitance | CJ |  | 40 | 50 | pF | VR = 0V, f = 1MHz | 2 |

## CAD (KiCad official)

- Symbol: `HUCLAMP0511P.TNT`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `huclamp0511p-tnt-etched.step` / `huclamp0511p-tnt-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `huclamp0511p-tnt.step` / `huclamp0511p-tnt.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/huclamp0511p-tnt-datasheet.pdf) (4 pp, sha256 `93fc22b9804a0b0a`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/huclamp0511p-tnt-datasheet.pdf)