component

HTW048N65C

Public Made by Adom

by adom

HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) deviceshtw048n65cfactory-2.0.0extractor-text

Verified HTW048N65C

by Ray · last 7 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

7 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HTW048N65C · TO-247 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-b1hp0anb/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ htw048n65c.kicad_sym✓ htw048n65c.kicad_mod✓ htw048n65c.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 2h ago
viewers htw048n65c: viewers · Ray 2h ago
htw048n65c-etched.glb Publish 0.1.0 · Ray 2h ago
htw048n65c-etched.step htw048n65c: factory component page (tier=lcsc) · Ray 2h ago
htw048n65c-hero.glb htw048n65c: hero GLB from the etched model (keeps the MPN mark) · Ray 2h ago
htw048n65c-hero.overlay.json Publish 0.1.0 · Ray 2h ago
htw048n65c.glb Publish 0.1.0 · Ray 2h ago
htw048n65c.kicad_mod Publish 0.1.0 · Ray 2h ago
htw048n65c.kicad_sym Publish 0.1.0 · Ray 2h ago
htw048n65c.lbr Publish 0.1.0 · Ray 2h ago
htw048n65c.step Publish 0.1.0 · Ray 2h ago
package.json Publish 0.1.0 · Ray 2h ago
page.json Set visibility: public · Ray 2h ago
README.md Publish 0.1.0 · Ray 2h ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 2h ago

HTW048N65C

HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247

HTW048N65C from HXY MOSFET, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive range is -5/+20 V (VGS) with an absolute dynamic maximum of -10/+25 V (VGSmax), and gate threshold VGS(th) is specified at VDS=VGS, ID=7mA.
2 D passive Drain; drain-source voltage is rated 650 V, with continuous drain current of 49 A at TC=25°C and 35 A at TC=100°C.
3 S passive Source; connects to the body diode anode and is the current return, with operating junction and storage temperature of -55 to +175 °C.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating junction and storage temperature Tj, Tstg -55 175 °C 1
Continuous drain current ID 49 A TC = 25°C 1
Continuous drain current ID 35 A TC = 100°C 1
Drain-source voltage VDS 650 V 1
Pulsed drain current ID pulse 123 A TC = 25°C, tp limited by Tjmax 1
Gate-Source voltage VGS -5 20 V 1
Power dissipation Ptot 242 W TC = 25°C 1
Gate-Source voltage (dynamic, absolute maximum values) VGSmax -10 25 V dynamic, absolute maximum values 1
Avalanche energy, single pulse EAS 1000 mJ L = 10mH 1
Thermal resistance, junction, case RthJC 0.62 °C/W 1
Thermal resistance, junction, ambient RthJA 40 °C/W 1
Drain-source breakdown voltage BVDSS 650 V VGS=0V, ID=250uA 2

CAD (KiCad official)

  • Symbol: HTW048N65C
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: htw048n65c-etched.step / htw048n65c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); htw048n65c.step / htw048n65c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (8 pp, sha256 162f6bf8b14d87ab, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF