# HTPC8408LQ

**HXY MOSFET** · MOSFETs · SOP-8

HTPC8408LQ from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (channel 1, VDS = 40V, ID = 7.2A). |
| 2 | G1 | input | Gate of the N-channel MOSFET (channel 1), VGS max ±20V, threshold 1.0 to 2.5V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (channel 2, VDS = -40V, ID = -6.5A). |
| 4 | G2 | input | Gate of the P-channel MOSFET (channel 2), VGS max ±20V, threshold -1.0 to -2.5V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (channel 2), tied to pin 6 externally. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (channel 2), tied to pin 5 externally. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (channel 1), tied to pin 8 externally. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (channel 1), tied to pin 7 externally. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Breakdown Voltage | BVDSS | 40 |  |  | V | VGS=0V, ID=250uA | 2 |
| N-ch Static Drain-Source On-Resistance | RDS(ON) |  | 20 | 26 | mΩ | VGS=10V, ID=5A | 2 |
| N-ch Static Drain-Source On-Resistance | RDS(ON) |  | 28 | 33 | mΩ | VGS=4.5V, ID=4A | 2 |
| N-ch Gate Threshold Voltage | VGS(th) | 1 |  | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| N-ch Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=32V, VGS=0V, TJ=25℃ | 2 |
| N-ch Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=32V, VGS=0V, TJ=55℃ | 2 |
| N-ch Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| N-ch Continuous Source Current | IS |  |  | 6.1 | A | VG=VD=0V, Force Current | 2 |
| N-ch Pulsed Source Current | ISM |  |  | 23 | A |  | 2 |
| N-ch Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| P-ch Drain-Source Breakdown Voltage | BVDSS | -40 |  |  | V | VGS=0V, ID=-250uA | 3 |
| P-ch Static Drain-Source On-Resistance | RDS(ON) |  | 35 | 44 | mΩ | VGS=-10V, ID=-6A | 3 |
| P-ch Static Drain-Source On-Resistance | RDS(ON) |  | 55 | 68 | mΩ | VGS=-4.5V, ID=-4A | 3 |
| P-ch Gate Threshold Voltage | VGS(th) | -1 |  | -2.5 | V | VGS=VDS, ID=-250uA | 3 |
| P-ch Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=-32V, VGS=0V, TJ=25℃ | 3 |
| P-ch Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=-32V, VGS=0V, TJ=55℃ | 3 |
| P-ch Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| P-ch Continuous Source Current | IS |  |  | -6 | A | VG=VD=0V, Force Current | 3 |
| P-ch Pulsed Source Current | ISM |  |  | -22 | A |  | 3 |
| P-ch Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |
| N-ch Drain-Source Voltage | VDS |  |  | 40 | V |  | 1 |
| P-ch Drain-Source Voltage | VDS | -40 |  |  | V |  | 1 |
| N-ch Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| P-ch Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| N-ch Continuous Drain Current | ID@TA=25℃ |  |  | 7.2 | A | VGS @ 10V | 1 |
| P-ch Continuous Drain Current | ID@TA=25℃ | -6.5 |  |  | A | VGS @ 10V | 1 |
| N-ch Continuous Drain Current | ID@TA=70℃ |  |  | 5.6 | A | VGS @ 10V | 1 |
| P-ch Continuous Drain Current | ID@TA=70℃ | -5.1 |  |  | A | VGS @ 10V | 1 |
| N-ch Pulsed Drain Current | IDM |  |  | 23 | A |  | 1 |
| P-ch Pulsed Drain Current | IDM | -22 |  |  | A |  | 1 |
| N-ch Single Pulse Avalanche Energy | EAS |  |  | 16.2 | mJ |  | 1 |
| P-ch Single Pulse Avalanche Energy | EAS |  |  | 39 | mJ |  | 1 |
| N-ch Avalanche Current | IAS |  |  | 18 | A |  | 1 |
| P-ch Avalanche Current | IAS | -28 |  |  | A |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 1.67 | W | TA=25℃ (N-ch and P-ch columns both 1.67) | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 75 | ℃/W | Note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 30 | ℃/W | Note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper | 1 |

## CAD (KiCad official)

- Symbol: `HTPC8408LQ`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `htpc8408lq-etched.step` / `htpc8408lq-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `htpc8408lq.step` / `htpc8408lq.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604438524683317248) (9 pp, sha256 `f7eec0bda8a00abf`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/htpc8408lq-datasheet.pdf)