component

HTLP521GB

Public Made by Adom

by adom

HXY MOSFET Transistor, Photovoltaic Output Optoisolators, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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HTLP521GB

HXY MOSFET · Transistor, Photovoltaic Output Optoisolators · DIP-4

HTLP521GB from HXY MOSFET, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive LED anode input; forward current max 50 mA (IF), reverse voltage max 6 V, VF 1.0-1.3 V at IF=10 mA.
2 K passive LED cathode input; return for the input LED current, isolated from the output side up to 5000 Vrms.
3 E passive Phototransistor emitter output; VECO max 7 V.
4 C passive Phototransistor collector output; VCEO max 80 V and collector current max 50 mA.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DIP-4
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward current IF 50 mA Ta=25°C 1
Reverse voltage VR 6 V Ta=25°C 1
Input power dissipation P 70 mW Ta=25°C 1
Collector power dissipation PC 150 mW Ta=25°C 1
Collector current IC 50 mA Ta=25°C 1
Collector-emitter voltage VCEO 80 V Ta=25°C 1
Emitter-collector voltage VECO 7 V Ta=25°C 1
Total power dissipation Ptot 200 mW Ta=25°C 1
Isolation voltage Viso 5000 Vrms Ta=25°C 1
Operating temperature Topr -55 110 °C Ta=25°C 1
Storage temperature Tstg -55 125 °C Ta=25°C 1
Soldering temperature Tsol 260 °C Ta=25°C 1
Current transfer ratio (HTLP521GB grade) CTR 100 600 % IF=5mA, VCE=5V, Ta=25°C 2
Forward voltage VF1 1 1.3 V IF=10mA 2
Forward voltage VF2 1.1 1.4 V IF=20mA 2
Reverse current IR 10 µA VR=5V 2
Terminal capacitance Ct 30 250 pF V=0, f=1kHz 2
Collector dark current ICEO 100 nA VCE=50V 2
Collector-emitter breakdown voltage BVCEO 80 V IC=0.1mA, IF=0 2
Emitter-collector breakdown voltage BVECO 7 V IE=10µA, IF=0 2
Collector-emitter saturation voltage VCE(sat) 0.25 0.8 V IF=20 mA, IC=1mA 2
Isolation capacitance Cf 0.6 1 pF V=0, f=1MHz 2

CAD (KiCad official)

  • Symbol: HTLP521GB
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4 (KiCad packages3D, STEP)
  • 3D model files: htlp521gb-etched.step / htlp521gb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); htlp521gb.step / htlp521gb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 c9c305dba61bfb68, retrieved 2026-10-16, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF