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Contents

README

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HT8612BRMZ

HTCSEMI · Operational Amplifier · MSOP-8

HT8612BRMZ from HTCSEMI, in a MSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT A output Amplifier A output, rail-to-rail with output current of ±50 mA at VS = 5 V.
2 -IN A input Amplifier A inverting input, input voltage range GND to VS.
3 +IN A input Amplifier A non-inverting input, input voltage range GND to VS.
4 V- power_in Negative supply or ground; single-supply operation from 2.7 V to 5.5 V across V+ and V-.
5 +IN B input Amplifier B non-inverting input, input voltage range GND to VS.
6 -IN B input Amplifier B inverting input, input voltage range GND to VS.
7 OUT B output Amplifier B output, rail-to-rail with output current of ±50 mA at VS = 5 V.
8 V+ power_in Positive supply, 2.7 V to 5.5 V operating, 6 V absolute maximum.

Key specifications

Parameter Value
Manufacturer HTCSEMI
Package MSOP-8
Category Operational Amplifier/Comparator
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Offset voltage VOS 80 500 µV VS=3V, 0 V ≤ VCM ≤ 1.3 V 2
Offset voltage VOS 700 µV VS=3V, 0 V ≤ VCM ≤ 1.3 V, −40°C ≤ TA ≤ +85°C 2
Offset voltage VOS 1100 µV VS=3V, 0 V ≤ VCM ≤ 1.3 V, −40°C ≤ TA ≤ +125°C 2
Offset voltage VOS 350 750 µV VS=3V, 0 V ≤ VCM ≤ 3 V 2
Offset voltage VOS 1800 µV VS=3V, 0 V ≤ VCM ≤ 3 V, −40°C ≤ TA ≤ +85°C 2
Offset voltage VOS 2100 µV VS=3V, 0 V ≤ VCM ≤ 3 V, −40°C ≤ TA ≤ +125°C 2
Input bias current IB 0.2 60 pA VS=3V 2
Input bias current IB 25 100 pA VS=3V, −40°C ≤ TA ≤ +85°C 2
Input bias current IB 150 1000 pA VS=3V, −40°C ≤ TA ≤ +125°C 2
Input offset current IOS 0.1 30 pA VS=3V 2
Input offset current IOS 50 pA VS=3V, −40°C ≤ TA ≤ +85°C 2
Input offset current IOS 500 pA VS=3V, −40°C ≤ TA ≤ +125°C 2
Input voltage range 0 3 V VS=3V 2
Common-mode rejection ratio CMRR 68 83 dB VS=3V, VCM = 0 V to 3 V 2
Large signal voltage gain AVO 30 100 V/mV VS=3V, VO = 0.5 V to 2.5 V, RL = 2 kΩ, VCM = 0 V 2
Offset voltage drift ΔVOS/ΔT 2 µV/°C VS=3V 2
Output voltage high VOH 2.92 2.95 V VS=3V, IL = 1.0 mA 2
Output voltage high VOH 2.88 V VS=3V, −40°C ≤ TA ≤ +125°C 2
Output voltage low VOL 20 35 mV VS=3V, IL = 1.0 mA 2
Output voltage low VOL 50 mV VS=3V, −40°C ≤ TA ≤ +125°C 2
Output current IOUT 30 mA VS=3V, printed ±30 2
Closed-loop output impedance ZOUT 12 Ω VS=3V, f = 1 MHz, AV = 1 2
Power supply rejection ratio PSRR 67 80 dB VS = 2.7 V to 5.5 V 2
Supply current per amplifier ISY 500 600 µA VS=3V, VO = 0 V 2
Supply current per amplifier ISY 800 µA VS=3V, −40°C ≤ TA ≤ +125°C 2
Slew rate SR 5.2 V/µs VS=3V, RL = 2 kΩ 2
Gain bandwidth product GBP 8.2 MHz VS=3V 2
Phase margin Φo 50 degrees VS=3V 2
Offset voltage VOS 80 500 µV VS=5V, 0 V ≤ VCM ≤ 5 V 3
Offset voltage VOS 1300 µV VS=5V, −40°C ≤ TA ≤ +125°C 3
Input bias current IB 0.2 60 pA VS=5V 3
Input bias current IB 100 pA VS=5V, −40°C ≤ TA ≤ +85°C 3
Input bias current IB 1000 pA VS=5V, −40°C ≤ TA ≤ +125°C 3
Input offset current IOS 0.1 30 pA VS=5V 3
Input offset current IOS 6 50 pA VS=5V, −40°C ≤ TA ≤ +85°C 3
Input offset current IOS 25 500 pA VS=5V, −40°C ≤ TA ≤ +125°C 3
Input voltage range 0 5 V VS=5V 3
Common-mode rejection ratio CMRR 74 89 dB VS=5V, VCM = 0 V to 5 V 3
Large signal voltage gain AVO 30 80 V/mV VS=5V, VO = 0.5 V to 4.5 V, RL = 2 kΩ, VCM = 0 V 3
Offset voltage drift ΔVOS/ΔT 2 µV/°C VS=5V 3
Output voltage high VOH 4.925 4.975 V VS=5V, IL = 1.0 mA 3
Output voltage high VOH 4.7 4.77 V VS=5V, IL = 10 mA 3
Output voltage high VOH 4.6 V VS=5V, −40°C ≤ TA ≤ +125°C 3
Output voltage low VOL 15 30 mV VS=5V, IL = 1.0 mA 3
Output voltage low VOL 125 175 mV VS=5V, IL = 10 mA 3
Output voltage low VOL 250 mV VS=5V, −40°C ≤ TA ≤ +125°C 3
Output current IOUT 50 mA VS=5V, printed ±50 3
Closed-loop output impedance ZOUT 10 Ω VS=5V, f = 1 MHz, AV = 1 3
Supply current per amplifier ISY 750 1200 µA VS=5V, VO = 0 V 3
Supply current per amplifier ISY 1500 µA VS=5V, −40°C ≤ TA ≤ +125°C 3
Slew rate SR 6 V/µs VS=5V, RL = 2 kΩ 3
Full power bandwidth BWp 360 kHz VS=5V, <1% distortion 3
Gain bandwidth product GBP 8.4 MHz VS=5V 3
Phase margin Φo 55 degrees VS=5V 3
Supply voltage VS 6 V 4
Differential input voltage -6 6 V printed ±6 V 4
Storage temperature range -65 150 °C 4
Operating temperature range -40 125 °C 4
Junction temperature range -65 150 °C 4
Lead temperature 300 °C soldering, 60 sec 4
ESD HBM 2 kV HBM 4

CAD (KiCad official)

  • Symbol: HT8612BRMZ
  • Footprint: Package_SO:MSOP-8_3x3mm_P0.65mm
  • 3D model: MSOP-8 (KiCad packages3D, STEP)
  • 3D model files: ht8612brmz-etched.step / ht8612brmz-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ht8612brmz.step / ht8612brmz.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HTCSEMI datasheet (13 pp, sha256 45038aa463d58198, retrieved 2026-10-23, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF