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Contents

README

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HT8544ARZ

HTCSEMI · Operational Amplifier · SOP-14

HT8544ARZ from HTCSEMI, in a SOP-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT A output Amplifier A output, rail-to-rail, with short-circuit current of ±60 mA at VS = 5 V.
2 -IN A input Amplifier A inverting input, rail-to-rail, with input voltage range GND to VS.
3 +IN A input Amplifier A non-inverting input, rail-to-rail, with input voltage range GND to VS.
4 V+ power_in Positive supply, 2.7 V to 5.5 V single-supply operation (absolute maximum 6 V).
5 +IN B input Amplifier B non-inverting input, rail-to-rail, with input voltage range GND to VS.
6 -IN B input Amplifier B inverting input, rail-to-rail, with input voltage range GND to VS.
7 OUT B output Amplifier B output, rail-to-rail, with short-circuit current of ±60 mA at VS = 5 V.
8 OUT C output Amplifier C output, rail-to-rail, with short-circuit current of ±60 mA at VS = 5 V.
9 -IN C input Amplifier C inverting input, rail-to-rail, with input voltage range GND to VS.
10 +IN C input Amplifier C non-inverting input, rail-to-rail, with input voltage range GND to VS.
11 V- power_in Negative supply or ground reference for single-supply operation.
12 +IN D input Amplifier D non-inverting input, rail-to-rail, with input voltage range GND to VS.
13 -IN D input Amplifier D inverting input, rail-to-rail, with input voltage range GND to VS.
14 OUT D output Amplifier D output, rail-to-rail, with short-circuit current of ±60 mA at VS = 5 V.

Key specifications

Parameter Value
Manufacturer HTCSEMI
Package SOP-14
Category Amplifiers/Comparators
Pins 14

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage VS 6 V 5
Differential Input Voltage -6 6 V For supplies less than 6 V, equal to ±VS 5
Storage Temperature Range -65 150 °C 5
Operating Temperature Range -40 125 °C 5
Junction Temperature Range -65 150 °C 5
Lead Temperature (Soldering) 300 °C Soldering, 60 sec 5
Input Voltage Range 0 2.7 V VS = 2.7 V, VCM = 1.35 V, TA = 25°C 2
Offset Voltage VOS 1 6 mV VS = 2.7 V, VCM = 1.35 V, TA = 25°C 2
Offset Voltage over temperature VOS 7 mV VS = 2.7 V, VCM = 1.35 V, -40°C ≤ TA ≤ +125°C 2
Input Bias Current IB 4 60 pA VS = 2.7 V, VCM = 1.35 V, TA = 25°C 2
Input Bias Current IB 100 pA VS = 2.7 V, VCM = 1.35 V, -40°C ≤ TA ≤ +85°C 2
Input Bias Current IB 1000 pA VS = 2.7 V, VCM = 1.35 V, -40°C ≤ TA ≤ +125°C 2
Input Offset Current IOS 0.1 30 pA VS = 2.7 V, VCM = 1.35 V, TA = 25°C 2
Input Offset Current IOS 50 pA VS = 2.7 V, VCM = 1.35 V, -40°C ≤ TA ≤ +85°C 2
Input Offset Current IOS 500 pA VS = 2.7 V, VCM = 1.35 V, -40°C ≤ TA ≤ +125°C 2
Common-Mode Rejection Ratio CMRR 40 45 dB VS = 2.7 V, TA = 25°C; VCM = 0 V to 2.7 V 2
Common-Mode Rejection Ratio over temperature CMRR 38 dB VS = 2.7 V; VCM = 0 V to 2.7 V; -40°C ≤ TA ≤ +125°C 2
Large Signal Voltage Gain AVO 100 500 V/mV VS = 2.7 V; RL = 100 kΩ, VO = 0.5 V to 2.2 V; TA = 25°C 2
Large Signal Voltage Gain AVO 50 V/mV VS = 2.7 V; RL = 100 kΩ, VO = 0.5 V to 2.2 V; -40°C ≤ TA ≤ +85°C 2
Large Signal Voltage Gain AVO 2 V/mV VS = 2.7 V; RL = 100 kΩ, VO = 0.5 V to 2.2 V; -40°C ≤ TA ≤ +125°C 2
Output Voltage High VOH 2.575 2.65 V VS = 2.7 V; IL = 1 mA; TA = 25°C 2
Output Voltage High over temperature VOH 2.55 V VS = 2.7 V; IL = 1 mA; -40°C ≤ TA ≤ +125°C 2
Output Voltage Low VOL 35 100 mV VS = 2.7 V; IL = 1 mA; TA = 25°C 2
Output Voltage Low over temperature VOL 125 mV VS = 2.7 V; IL = 1 mA; -40°C ≤ TA ≤ +125°C 2
Short-Circuit Output Current ±ISC -20 20 mA VS = 2.7 V, VCM = 1.35 V, TA = 25°C 2
Power Supply Rejection Ratio PSRR 65 76 dB VS = 2.5 V to 6 V; TA = 25°C 2
Power Supply Rejection Ratio over temperature PSRR 60 dB VS = 2.5 V to 6 V; -40°C ≤ TA ≤ +125°C 2
Supply Current per Amplifier ISY 38 55 μA VS = 2.7 V; VO = 0 V; TA = 25°C 2
Supply Current per Amplifier over temperature ISY 75 μA VS = 2.7 V; VO = 0 V; -40°C ≤ TA ≤ +125°C 2
Slew Rate SR 0.4 0.75 V/μs VS = 2.7 V; RL = 100 kΩ 2
Input Voltage Noise Density (1 kHz) en 40 nV/√Hz VS = 2.7 V; f = 1 kHz 2
Input Current Noise Density in 0.1 pA/√Hz VS = 2.7 V (printed as <0.1) 2
Offset Voltage Drift ΔVOS/ΔT 4 μV/°C VS = 2.7 V; -40°C ≤ TA ≤ +125°C 2
Input Bias Current Drift ΔIB/ΔT 100 fA/°C VS = 2.7 V; -40°C ≤ TA ≤ +85°C 2
Input Bias Current Drift ΔIB/ΔT 2000 fA/°C VS = 2.7 V; -40°C ≤ TA ≤ +125°C 2
Input Offset Current Drift ΔIOS/ΔT 25 fA/°C VS = 2.7 V; -40°C ≤ TA ≤ +125°C 2
Output Current IOUT 15 mA VS = 2.7 V; VOUT = VS, 1 V 2
Closed-Loop Output Impedance ZOUT 50 Ω VS = 2.7 V; f = 200 kHz, AV = 1 2
Settling Time tS 5 μs VS = 2.7 V; to 0.1% (1 V step) 2
Gain Bandwidth Product GBP 980 kHz VS = 2.7 V 2
Phase Margin Φo 63 Degrees VS = 2.7 V 2
Voltage Noise Density (10 kHz) en 38 nV/√Hz VS = 2.7 V; f = 10 kHz 2
Thermal Resistance, Junction-to-Ambient (14-Lead SOIC, R) θJA 120 °C/W Device soldered in circuit board (surface-mount, worst case) 5
Thermal Resistance, Junction-to-Case (14-Lead SOIC, R) θJC 36 °C/W 14-Lead SOIC (R) 5

CAD (KiCad official)

  • Symbol: HT8544ARZ
  • Footprint: Package_SO:SOIC-14_3.9x8.7mm_P1.27mm
  • 3D model: SOP-14 (KiCad packages3D, STEP)
  • 3D model files: ht8544arz-etched.step / ht8544arz-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ht8544arz.step / ht8544arz.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HTCSEMI datasheet (14 pp, sha256 a635442631ae23ff, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF