component
HT285T-1.2
Public Made by Adomby adom
HTCSEMI Voltage Reference, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
HT285T-1.2
HTCSEMI · Voltage Reference · TO-92
HT285T-1.2 from HTCSEMI, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | N.C. | unconnected | No internal connection; the bottom-view diagram shows no connection to the diode symbol on this lead. |
| 2 | Cathode | passive | Cathode (reference voltage terminal) of the two-terminal 1.235 V bandgap reference diode, operating from 10 µA to 20 mA reverse current. |
| 3 | Anode | passive | Anode (return) terminal of the two-terminal reference diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HTCSEMI |
| Package | TO-92 |
| Category | Power Management (PMIC) |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage (IRmin ≤ IR ≤ 20 mA) | V(BR)R | 1.223 | 1.235 | 1.247 | V | IRmin ≤ IR ≤ 20 mA | 3 |
| Reverse Breakdown Voltage (IRmin ≤ IR ≤ 20 mA), TA = Tlow to Thigh | V(BR)R | 1.2 | 1.27 | V | IRmin ≤ IR ≤ 20 mA, TA = Tlow to Thigh (Note 1) | 3 | |
| Reverse Breakdown Voltage Change with Current | V(BR)R | 1 | mV | IRmin ≤ IR ≤ 1.0 mA, TA = +25°C | 3 | ||
| Reverse Breakdown Voltage Change with Current | V(BR)R | 1.5 | mV | IRmin ≤ IR ≤ 1.0 mA, TA = Tlow to Thigh (Note 1) | 3 | ||
| Reverse Breakdown Voltage Change with Current | V(BR)R | 10 | mV | 1.0 mA ≤ IR ≤ 20 mA, TA = +25°C | 3 | ||
| Reverse Breakdown Voltage Change with Current | V(BR)R | 20 | mV | 1.0 mA ≤ IR ≤ 20 mA, TA = Tlow to Thigh (Note 1) | 3 | ||
| Reverse Dynamic Impedance | Z | 0.6 | Ω | IR = 100 μA, TA = +25°C | 3 | ||
| Average Temperature Coefficient | V(BR)/T | 80 | ppm/°C | 10 μA ≤ IR ≤ 20 mA, TA = Tlow to Thigh (Note 1) | 3 | ||
| Wideband Noise (RMS) | n | 60 | μV | IR = 100 μA, 10 Hz ≤ f ≤ 10 kHz | 3 | ||
| Long Term Stability | S | 20 | ppm/kHR | IR = 100 μA, TA = +25°C ± 0.1°C | 3 | ||
| Reverse Current | IR | 30 | mA | 3 | |||
| Forward Current | IF | 10 | mA | 3 | |||
| Operating Ambient Temperature Range (HT285) | TA | -40 | 85 | °C | HT285 variant | 3 | |
| Operating Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature Range | Tstg | -65 | 150 | °C | 3 | ||
| Electrostatic Discharge Sensitivity (ESD) | ESD | 4000 | V | Human Body Model (HBM) | 3 | ||
| Electrostatic Discharge Sensitivity (ESD) | ESD | 400 | V | Machine Model (MM) | 3 | ||
| Electrostatic Discharge Sensitivity (ESD) | ESD | 2000 | V | Charged Device Model (CDM) | 3 |
CAD (KiCad official)
- Symbol:
HT285T-1.2 - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
ht285t-1-2-etched.step/ht285t-1-2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ht285t-1-2.step/ht285t-1-2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HTCSEMI datasheet (9 pp, sha256
37a787a54144bfa1, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HT285T-1.2
**HTCSEMI** · Voltage Reference · TO-92
HT285T-1.2 from HTCSEMI, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | N.C. | unconnected | No internal connection; the bottom-view diagram shows no connection to the diode symbol on this lead. |
| 2 | Cathode | passive | Cathode (reference voltage terminal) of the two-terminal 1.235 V bandgap reference diode, operating from 10 µA to 20 mA reverse current. |
| 3 | Anode | passive | Anode (return) terminal of the two-terminal reference diode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HTCSEMI |
| Package | TO-92 |
| Category | Power Management (PMIC) |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage (IRmin ≤ IR ≤ 20 mA) | V(BR)R | 1.223 | 1.235 | 1.247 | V | IRmin ≤ IR ≤ 20 mA | 3 |
| Reverse Breakdown Voltage (IRmin ≤ IR ≤ 20 mA), TA = Tlow to Thigh | V(BR)R | 1.2 | | 1.27 | V | IRmin ≤ IR ≤ 20 mA, TA = Tlow to Thigh (Note 1) | 3 |
| Reverse Breakdown Voltage Change with Current | V(BR)R | | | 1 | mV | IRmin ≤ IR ≤ 1.0 mA, TA = +25°C | 3 |
| Reverse Breakdown Voltage Change with Current | V(BR)R | | | 1.5 | mV | IRmin ≤ IR ≤ 1.0 mA, TA = Tlow to Thigh (Note 1) | 3 |
| Reverse Breakdown Voltage Change with Current | V(BR)R | | | 10 | mV | 1.0 mA ≤ IR ≤ 20 mA, TA = +25°C | 3 |
| Reverse Breakdown Voltage Change with Current | V(BR)R | | | 20 | mV | 1.0 mA ≤ IR ≤ 20 mA, TA = Tlow to Thigh (Note 1) | 3 |
| Reverse Dynamic Impedance | Z | | 0.6 | | Ω | IR = 100 μA, TA = +25°C | 3 |
| Average Temperature Coefficient | V(BR)/T | | 80 | | ppm/°C | 10 μA ≤ IR ≤ 20 mA, TA = Tlow to Thigh (Note 1) | 3 |
| Wideband Noise (RMS) | n | | 60 | | μV | IR = 100 μA, 10 Hz ≤ f ≤ 10 kHz | 3 |
| Long Term Stability | S | | 20 | | ppm/kHR | IR = 100 μA, TA = +25°C ± 0.1°C | 3 |
| Reverse Current | IR | | | 30 | mA | | 3 |
| Forward Current | IF | | | 10 | mA | | 3 |
| Operating Ambient Temperature Range (HT285) | TA | -40 | | 85 | °C | HT285 variant | 3 |
| Operating Junction Temperature | TJ | | | 150 | °C | | 3 |
| Storage Temperature Range | Tstg | -65 | | 150 | °C | | 3 |
| Electrostatic Discharge Sensitivity (ESD) | ESD | | | 4000 | V | Human Body Model (HBM) | 3 |
| Electrostatic Discharge Sensitivity (ESD) | ESD | | | 400 | V | Machine Model (MM) | 3 |
| Electrostatic Discharge Sensitivity (ESD) | ESD | | | 2000 | V | Charged Device Model (CDM) | 3 |
## CAD (KiCad official)
- Symbol: `HT285T-1.2`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `ht285t-1-2-etched.step` / `ht285t-1-2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ht285t-1-2.step` / `ht285t-1-2.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HTCSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602958409344040960) (9 pp, sha256 `37a787a54144bfa1`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ht285t-1-2-datasheet.pdf)