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HT27M2BRZ

HTCSEMI · Operational Amplifier · SOP-8

HT27M2BRZ from HTCSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Out1 output Output of amplifier 1.
2 In1- input Inverting input of amplifier 1; input voltage range 0 to VCC+ - 1.5 V.
3 In1+ input Non-inverting input of amplifier 1; input voltage range 0 to VCC+ - 1.5 V.
4 VCC- power_in Negative supply, ground in single-supply operation.
5 In2+ input Non-inverting input of amplifier 2; input voltage range 0 to VCC+ - 1.5 V.
6 In2- input Inverting input of amplifier 2; input voltage range 0 to VCC+ - 1.5 V.
7 Out2 output Output of amplifier 2.
8 VCC+ power_in Positive supply, 1.5 to 10 V operating range, 10 V absolute maximum.

Key specifications

Parameter Value
Manufacturer HTCSEMI
Package SOP-8
Category Operational Amplifier/Comparator
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage VCC+ 1.5 10 V 2
Operating free air temperature range Toper -40 85 °C HT27M2A/B/C 2
Common mode input voltage range Vicm 0 V Upper limit printed as VCC+ - 1.5 V 2
Supply voltage VCC+ 10 V 2
Differential input voltage Vid -5 5 V Printed as ±5 V 2
Input voltage Vi -0.3 10 V Printed as -0.3 to 10 V 2
Output current Io -5 5 mA For VCC+ ≥ 10V; printed as ±5 mA 2
Input current Iin -5 5 mA Printed as ±5 mA 2
Thermal resistance junction to ambient, SO-8 Rthja 125 °C/W SO-8 package; Rth are typical values 2
Storage temperature range Tstg -65 150 °C 2
Maximum junction temperature Tj 150 °C 2
ESD human body model HBM 500 V Human body model, 100 pF through 1.5 kΩ 2
ESD machine model MM 100 V Machine model, 200 pF 2
ESD charged device model CDM 1.5 kV Charged device model 2
Input offset voltage drift DVio 2 µV/°C 3
Input offset current Iio 1 pA Vic = 5 V, VO = 5 V 3
Input offset current Iio 100 pA Vic = 5 V, VO = 5 V; Tmin ≤ Tamb ≤ Tmax 3
Input bias current Iib 1 pA Vic = 5 V, VO = 5 V 3
Input bias current Iib 150 pA Vic = 5 V, VO = 5 V; Tmin ≤ Tamb ≤ Tmax 3
Low level output voltage VOL 50 mV Vid = -100 mV 3
Large signal voltage gain Avd 30 V/mV ViC = 5 V, RL = 100 kΩ, Vo = 1 V to 6 V 3
Large signal voltage gain Avd 20 V/mV ViC = 5 V, RL = 100 kΩ, Vo = 1 V to 6 V; Tmin ≤ Tamb ≤ Tmax 3
Common mode rejection ratio CMR 65 80 dB ViC = 1 V to 7.4 V, Vo = 1.4 V 3
Supply voltage rejection ratio SVR 60 80 dB VCC+ = 5 V to 10 V, Vo = 1.4 V 3
Supply current (per amplifier) ICC 150 200 µA Av = 1, no load, Vo = 5 V 3
Supply current (per amplifier) ICC 250 µA Av = 1, no load, Vo = 5 V; Tmin ≤ Tamb ≤ Tmax 3
Gain bandwidth product GBP 0.5 1 MHz Av = 40 dB, RL = 100 kΩ, CL = 100 pF, fin = 100 kHz 4
Slew rate at unity gain SR 0.3 0.6 V/µs RL = 100 kΩ, CL = 100 pF, Vi = 3 to 7 V 4
Phase margin at unity gain φm 45 Degrees Av = 40 dB, RL = 100 kΩ, CL = 100 pF 4
Equivalent input noise voltage en 38 nV/√Hz f = 1 kHz, Rs = 100 Ω 4
Channel separation Vo1/Vo2 120 dB 4

CAD (KiCad official)

  • Symbol: HT27M2BRZ
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ht27m2brz-etched.step / ht27m2brz-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ht27m2brz.step / ht27m2brz.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HTCSEMI datasheet (9 pp, sha256 08d5ccbf8856e3da, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF