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HT1413ARZ

Public Made by Adom

by adom

HTCSEMI Darlington Transistor Arrays, SOP-16. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HT1413ARZ

HTCSEMI · Darlington Transistor Arrays · SOP-16

HT1413ARZ from HTCSEMI, in a SOP-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I1 input Input of Darlington driver 1 with 2.7 k series input resistor, suited to 5.0 V TTL/CMOS logic; maximum input voltage 30 V.
2 I2 input Input of Darlington driver 2 with 2.7 k series input resistor, suited to 5.0 V TTL/CMOS logic; maximum input voltage 30 V.
3 I3 input Input of Darlington driver 3 with 2.7 k series input resistor, suited to 5.0 V TTL/CMOS logic; maximum input voltage 30 V.
4 I4 input Input of Darlington driver 4 with 2.7 k series input resistor, suited to 5.0 V TTL/CMOS logic; maximum input voltage 30 V.
5 I5 input Input of Darlington driver 5 with 2.7 k series input resistor, suited to 5.0 V TTL/CMOS logic; maximum input voltage 30 V.
6 I6 input Input of Darlington driver 6 with 2.7 k series input resistor, suited to 5.0 V TTL/CMOS logic; maximum input voltage 30 V.
7 I7 input Input of Darlington driver 7 with 2.7 k series input resistor, suited to 5.0 V TTL/CMOS logic; maximum input voltage 30 V.
8 GND power_in Ground (emitter common) of the transistor array.
9 COM passive Common connection of the internal clamp (suppression) diodes, tied to the supply of the inductive load; diode forward current rated 350 mA.
10 O7 output Open-collector Darlington output 7; maximum output voltage 50 V and continuous collector current 500 mA.
11 O6 output Open-collector Darlington output 6; maximum output voltage 50 V and continuous collector current 500 mA.
12 O5 output Open-collector Darlington output 5; maximum output voltage 50 V and continuous collector current 500 mA.
13 O4 output Open-collector Darlington output 4; maximum output voltage 50 V and continuous collector current 500 mA.
14 O3 output Open-collector Darlington output 3; maximum output voltage 50 V and continuous collector current 500 mA.
15 O2 output Open-collector Darlington output 2; maximum output voltage 50 V and continuous collector current 500 mA.
16 O1 output Open-collector Darlington output 1; maximum output voltage 50 V and continuous collector current 500 mA.

Key specifications

Parameter Value
Manufacturer HTCSEMI
Package SOP-16
Category Transistors/Thyristors
Pins 16

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Output Leakage Current (VO = 50 V, TA = +85°C) ICEX 100 A VO = 50 V, TA = +85°C 3
Output Leakage Current (VO = 50 V, TA = +25°C) ICEX 50 A VO = 50 V, TA = +25°C 3
Collector−Emitter Saturation Voltage VCE(sat) 1.1 1.6 V IC = 350 mA, IB = 500 A 3
Collector−Emitter Saturation Voltage VCE(sat) 0.95 1.3 V IC = 200 mA, IB = 350 A 3
Collector−Emitter Saturation Voltage VCE(sat) 0.85 1.1 V IC = 100 mA, IB = 250 A 3
Input Current − On Condition (HT1413A) II(on) 0.93 1.35 mA VI = 3.85 V 3
Input Voltage − On Condition (HT1413A) VI(on) 2.4 V VCE = 2.0 V, IC = 200 mA 3
Input Voltage − On Condition (HT1413A) VI(on) 2.7 V VCE = 2.0 V, IC = 250 mA 3
Input Voltage − On Condition (HT1413A) VI(on) 3 V VCE = 2.0 V, IC = 300 mA 3
Input Current − Off Condition II(off) 50 100 A IC = 500 A, TA = 85°C 3
DC Current Gain hFE 1000 VCE = 2.0 V, IC = 350 mA 3
Input Capacitance CI 15 30 pF 3
Turn−On Delay Time ton 0.25 1 s 50% EI to 50% EO 3
Turn−Off Delay Time toff 0.25 1 s 50% EI to 50% EO 3
Clamp Diode Leakage Current IR 50 A VR = 50 V, TA = +25°C 3
Clamp Diode Leakage Current IR 100 A VR = 50 V, TA = +85°C 3
Clamp Diode Forward Voltage VF 1.5 2 V IF = 350 mA 3
Output Voltage VO 50 V 2
Input Voltage VI 30 V 2
Collector Current − Continuous IC 500 mA 2
Base Current − Continuous IB 25 mA 2
Operating Ambient Temperature Range TA -40 85 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction Temperature TJ 150 °C 2
Electrostatic Discharge, Human Body Model ESD 2000 V HBM 2
Electrostatic Discharge, Machine Model ESD 400 V MM 2
Electrostatic Discharge, Charged Device Model ESD 1500 V CDM 2
Thermal Resistance, Junction−to−Ambient (Case 751B, D Suffix) RJA 100 °C/W Case 751B, D Suffix 2
Thermal Resistance, Junction−to−Case (Case 751B, D Suffix) RJC 20 °C/W Case 751B, D Suffix 2

CAD (KiCad official)

  • Symbol: HT1413ARZ
  • Footprint: Package_SO:SOIC-16_3.9x9.9mm_P1.27mm
  • 3D model: SOP-16 (KiCad packages3D, STEP)
  • 3D model files: ht1413arz-etched.step / ht1413arz-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ht1413arz.step / ht1413arz.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HTCSEMI datasheet (6 pp, sha256 f054e09776cea4ae, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF