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Contents

README

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HT03AM-12

HTCSEMI · TRIACs · TO-92-3

HT03AM-12 from HTCSEMI, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Cathode passive Cathode (K) of the thyristor; main current return terminal, with IT(AV) 0.3 A and IT(RMS) 0.47 A rated on-state current.
2 Anode passive Anode (A) of the thyristor; main terminal with VDRM/VRRM of 600 V repetitive peak off-state/reverse voltage.
3 Gate input Gate trigger input; IGT 1 to 100 µA and VGT max 0.8 V at Tj = 25°C, VD = 6 V, with RGK = 1 kΩ gate-to-cathode resistance specified for ratings.

Key specifications

Parameter Value
Manufacturer HTCSEMI
Package TO-92-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 600 V Voltage class 12 1
Non-repetitive peak reverse voltage VRSM 800 V Voltage class 12 1
DC reverse voltage VR(DC) 480 V Voltage class 12 1
Repetitive peak off-state voltage VDRM 600 V RGK = 1 kΩ 1
Non-repetitive peak off-state voltage VDSM 800 V RGK = 1 kΩ 1
DC off-state voltage VD(DC) 480 V RGK = 1 kΩ 1
RMS on-state current IT (RMS) 0.47 A 2
Average on-state current IT (AV) 0.3 A Commercial frequency, sine half wave 180° conduction, Ta = 47°C 2
Surge on-state current ITSM 20 A 60Hz sine half wave 1 full cycle, peak value, non-repetitive 2
I2t for fusing I2t 1.6 A2s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 2
Peak gate power dissipation PGM 0.5 W 2
Average gate power dissipation PG (AV) 0.1 W 2
Peak gate forward voltage VFGM 6 V 2
Peak gate reverse voltage VRGM 6 V 2
Peak gate forward current IFGM 0.3 A 2
Junction temperature Tj -40 110 °C 2
Storage temperature Tstg -40 125 °C 2
Repetitive peak reverse current IRRM 0.1 mA Tj = 110°C, VRRM applied 2
Repetitive peak off-state current IDRM 0.1 mA Tj = 110°C, VDRM applied, RGK = 1 kΩ 2
On-state voltage VTM 1.8 V Ta = 25°C, ITM = 4 A, instantaneous value 2
Gate trigger voltage VGT 0.8 V Tj = 25°C, VD = 6 V, IT = 0.1 A 2
Gate non-trigger voltage VGD 0.2 V Tj = 110°C, VD = 1/2 VDRM, RGK = 1 kΩ 2
Gate trigger current IGT 1 100 A Tj = 25°C, VD = 6 V, IT = 0.1 A 2
Holding current IH 1.5 3 mA Tj = 25°C, VD = 12 V, RGK = 1 kΩ 2
Thermal resistance junction to ambient Rth (j-a) 180 °C/W Junction to ambient 2

CAD (KiCad official)

  • Symbol: HT03AM-12
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: ht03am-12-etched.step / ht03am-12-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ht03am-12.step / ht03am-12.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HTCSEMI datasheet (7 pp, sha256 dbabac6d65989824, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF