component
HSZESD5Z3.3T5G
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), SOD-523. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
main
HSZESD5Z3.3T5G
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · SOD-523
HSZESD5Z3.3T5G from HXY MOSFET, in a SOD-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-523 |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage Temperature Range | Tstg | -55 | 155 | °C | 1 | ||
| Operating Temperature Range | Top | -40 | 125 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| IEC61000-4-2 (ESD) air discharge | -30 | 30 | kV | air discharge | 1 | ||
| IEC61000-4-2 (ESD) contact discharge | -30 | 30 | kV | contact discharge | 1 | ||
| IEC61000-4-4 (EFT) | 40 | A | 1 | ||||
| Peak Pulse Power | PPP | 158 | W | tp = 8/20 μs | 1 | ||
| Reverse Breakdown Voltage | VBR | 5 | V | IT = 1 mA | 2 | ||
| Reverse Leakage Current | IR | 900 | nA | VRWM = 3.3 V | 2 | ||
| Clamping Voltage | 9.4 | 14.1 | V | IRWM = 11.2 A, tp = 8/20 μs | 2 | ||
| Junction Capacitance | CJ | 130 | 150 | pF | VR = 0 V, f = 1 MHz | 2 |
CAD (KiCad official)
- Symbol:
HSZESD5Z3.3T5G - Footprint:
Diode_SMD:D_SOD-523 - 3D model: SOD-523 (KiCad packages3D, STEP)
- 3D model files:
hszesd5z3-3t5g-etched.step/hszesd5z3-3t5g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hszesd5z3-3t5g.step/hszesd5z3-3t5g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
251f199af7efef8b, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HSZESD5Z3.3T5G
**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · SOD-523
HSZESD5Z3.3T5G from HXY MOSFET, in a SOD-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-523 |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage Temperature Range | Tstg | -55 | | 155 | °C | | 1 |
| Operating Temperature Range | Top | -40 | | 125 | °C | | 1 |
| Maximum junction temperature | Tj | | | 150 | °C | | 1 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10s | 1 |
| IEC61000-4-2 (ESD) air discharge | | -30 | | 30 | kV | air discharge | 1 |
| IEC61000-4-2 (ESD) contact discharge | | -30 | | 30 | kV | contact discharge | 1 |
| IEC61000-4-4 (EFT) | | | | 40 | A | | 1 |
| Peak Pulse Power | PPP | | | 158 | W | tp = 8/20 μs | 1 |
| Reverse Breakdown Voltage | VBR | 5 | | | V | IT = 1 mA | 2 |
| Reverse Leakage Current | IR | | | 900 | nA | VRWM = 3.3 V | 2 |
| Clamping Voltage | | | 9.4 | 14.1 | V | IRWM = 11.2 A, tp = 8/20 μs | 2 |
| Junction Capacitance | CJ | | 130 | 150 | pF | VR = 0 V, f = 1 MHz | 2 |
## CAD (KiCad official)
- Symbol: `HSZESD5Z3.3T5G`
- Footprint: `Diode_SMD:D_SOD-523`
- 3D model: SOD-523 (KiCad packages3D, STEP)
- 3D model files: `hszesd5z3-3t5g-etched.step` / `hszesd5z3-3t5g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hszesd5z3-3t5g.step` / `hszesd5z3-3t5g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603009230333370368) (4 pp, sha256 `251f199af7efef8b`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hszesd5z3-3t5g-datasheet.pdf)